Lg Semicon Co., Ltd.

Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Seo Kyu Lee

Hang Kyoo Kim

Jung Soon Shin

Jin Seop Shim

Yong Cheol Park

Yong In Park

Provided with a solid state image sensor, which is adapted to simplify the process with enhancement of the morphology of the device and has photo-diodes formed on a semiconductor substrate, and transfer gates disposed around the photo-diodes to transfer signal charges generated from the photo-diodes, the solid state image sensor including: an insulating layer forming on the whole surface of the semiconductor substrate and having a contact hole exposing a defined portion of the transfer gates; a metal line formed to include the inside of the contact hole; and a light-shielding layer formed in the same layer with the metal line without overlapping the upper parts of the photo-diodes.

Solid state CCD image sensor having a light shielding layer

A charge coupled device includes a plurality of photoelectric conversion regions; a plurality of vertical charge coupled devices (VCCDs) provided between the photoelectric conversion regions for transmission of charges generated at the photoelectric conversion regions in a first direction; and a horizontal charge coupled device (HCCD) coupled to the VCCDs and having a channel region including a plurality of channels for transmission of the charges previously transmitted through the VCCDs in a second direction. The channel region is formed such that one of the plurality of channels has a higher potential than the remaining channels. The remaining channels have potentials that gradually become lower than the highest potential moving in a direction away from the channel with the highest potential. The channel region transmits the charges within the HCCD so that the charges are gathered together centered around the channel having the highest potential during transmission of the charges.

Charge coupled device with split channeled HCCD

The present invention relates to a CMOS image sensor and a fabrication method thereof. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.

CMOS image sensor and a fabrication method for the same

An active pixel circuit in a CMOS image sensor includes a photodiode to accumulate charge due to incident light. A first transfer transistor is arranged to pass a transfer signal when turned on by a column selection signal. A second transfer transistor transfers the accumulated charge from the photodiode to a first floating node when turned on by the transfer signal from the first transfer transistor. A source follow driver transistor changes the potential of a second floating node according to the charge transferred to the first floating node. A line selecting transistor reads out the potential of the second floating node when turned on by a line selection signal, and a reset transistor resets the charges accumulated in the first floating node when the reading out operation is finished.

Active pixel circuit in CMOS image sensor

A CCD and method of fabricating the same, which reads signal charges completely and increases the fill factor of its pixel, to improve the sensitivity. The CCD having photodiodes in matrix form, includes a first interlevel insulating layer and first transfer gate sequentially formed between the photodiodes arranged in the row direction, a block insulating layer formed along the center of the first transfer gate, a second interlevel insulating layer formed on the first transfer gate, second and third transfer gates formed on the first transfer gate, being isolated from each other on the block insulating layer, a third interlevel insulating layer formed on the second and third transfer gates, and a fourth transfer gate formed on the third interlevel insulating layer, being placed on the second and third transfer gates.

Charge coupled device and method of fabricating the same

A CMOS image sensor and a fabrication method thereof are disclosed. The sensor has a photo diode region being extended to a lower portion of an active region in which a transfer gate, sensing gate and reset gate are formed and therefrom the sensitivity of the CMOS image sensor is enhanced. The sensor of the present invention includes a unit cell region having a first region and a second region adjacent to the first region, a PDN region having a first PDN region which is extended from the surface in the first region into the bulk in a direction perpendicular to the surface in an accompanying drawing and a second PDN region which is extended from the lower portion of the first PDN region into the lower portion of the second region in a horizontal direction in the accompanying drawing, and a floating diffusion region and a reset region which are formed in a surface of the second region above the second PDN region.

The charge coupled device (CCD) formed according the method of the present invention includes a substrate, at least two photodiodes formed in the substrate and a first insulating layer formed on the substrate. A first transfer gate is formed on a portion of the first insulating layer between the photodiodes. A second insulating layer covers the first transfer gate, and has a projecting portion projecting up from the first transfer gate. The CCD further includes second and third transfer gates disposed over respective sides of the projecting portion of the second insulating layer and the first transfer gate with the second and third transfer gates having a gap therebetween over the projecting portion. A third insulating layer covers the second and third transfer gates, and a fourth transfer gate is formed over a portion of the second and third transfer gates and over the projecting portion of the second insulating layer.

Charge coupled device

The present invention relates to a HCCD of a CCD image sensor comprising a channel stop region, a BCCD channel formed on the channel stop region, a plurality of first poly gates and a plurality of second poly gates formed on the BCCD channel and alternately arranged in a partially overlapping manner, and a dummy gate formed on the BCCD channel between first and second selected ones of the second poly gates.

Growing community of inventors

Chungcheongbuk-do, South Korea

Seo Kyu Lee