Skhynix Inc.

Samsung Electronics Co., Ltd.

Seo Hyun Kim

Dong Hwan Lee

Eun Seok Choi

Young-Hoo Kim

Kun Young Lee

Kun Tack Lee

Jung Hyun Kim

Seung Hoon Lee

Young Chan Kim

Jong Chul Choi

Seung Taek Oh

In Ku Kang

Seung Min Shin

Tae-Hong Kim

Sung Hyun Park

Hun Jae Jang

Sang Jine Park

Myung Gon Kim

Seok Gyu Lee

Ji Hoon Jeong

Ha Lim Lee

Kun Chan Seo

Tae Kon Kim

Hyun Suk Shin

Seung Ho Kim

Hyun Woo Nho

Soon Ho Han

A substrate drying apparatus includes; a drying chamber configured to load a substrate and including a lower chamber and an upper chamber above the lower chamber, a supply port configured to supply a supercritical fluid into the drying chamber and including a main supply port and a sub-supply port horizontally spaced apart from the main supply port, wherein the main supply port penetrates a center portion of the upper chamber, and a first buffer member coupled to the upper chamber, vertically separated from the sub-supply port, and vertically overlapping the sub-supply port, such that supercritical fluid vertically introduced into the drying chamber through the sub-supply port is impeded by the first buffer member to change a flow direction for the supercritical fluid.

Substrate drying apparatus and semiconductor device manufacturing method using same

A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

Wafer cleaning apparatus and wafer cleaning method using the same

There are provided a semiconductor memory device and a manufacturing method of the same. The semiconductor memory device includes: a stack structure including conductive patterns and interlayer insulating layers, which are alternately stacked in a first direction; a channel layer penetrating the stack structure; a first semiconductor layer disposed on the stack structure, the first semiconductor layer including a first impurity of a first conductivity type; a second semiconductor layer disposed on the first semiconductor layer, the second semiconductor layer including a well region with a second impurity of a second conductivity type, wherein the second conductivity type is different from the first conductivity type; and a memory layer between the channel layer and the stack structure.

Semiconductor memory device and manufacturing method of semiconductor memory device

A method of manufacturing a semiconductor device includes forming a stacked structure with first material layers and second material layers that are alternately stacked with each other, forming a first opening that passes through the stacked structure, forming second openings between the first material layers, forming first sacrificial layers in the second openings, forming first isolation layers that protrude into the first opening by oxidizing the first sacrificial layers, forming mold patterns on the first material layers between the protruding portions of the first isolation layers, forming third openings by etching portions of the first isolation layers that are exposed between the mold patterns, forming second sacrificial layers in the third openings, and forming second isolation layers that protrude farther toward the center of the first opening than the mold patterns by oxidizing the second sacrificial layers.

Semiconductor device and manufacturing method of semiconductor device

A method for fabricating a semiconductor device includes: forming a mold stack layer including a mold layer and a supporter layer over a substrate; forming opening by etching the mold stack layer; selectively forming a supporter reinforcement layer on an exposed surface of the supporter layer which is positioned in the opening; forming a bottom electrode in the opening in which the supporter reinforcement layer is formed; and forming a supporter opening by etching a portion of the supporter layer to form a supporter that supports an outer wall of the bottom electrode.

Semiconductor device and method for fabricating the same

A semiconductor memory device and a method of manufacturing the semiconductor memory device are provided. The semiconductor memory device includes a channel layer with a first portion and a second portion, the first portion and the second portion extending in a longitudinal direction, a gate stacked structure surrounding the first portion of the channel layer, a first semiconductor layer of a first conductivity type that contacts the second portion of the channel layer, and a second semiconductor layer of a second conductivity type.

Semiconductor memory device and manufacturing method of the semiconductor memory device

An electronic device includes a processor and a housing having a first surface, a second surface, and a side surface. A touch screen display is exposed through a first area of the first surface. An optical sensor is disposed under a second area of the first surface that is adjacent to the first area. The optical sensor receives and/or emits an infrared ray. The first surface includes a substantially transparent glass layer, an opaque layer disposed between the glass layer and the second surface, and a color layer disposed between the opaque layer and the glass layer. The opaque layer includes an opening, a location and a size of which correspond to at least a portion of the optical sensor when viewed from the first surface. The optical sensor receives and/or emits the infrared ray through the opening, the color layer, and the glass layer.

Cover window and electronic device including same

Disclosed is an electronic device including a housing with a first surface facing a first direction and a second surface facing a second, opposite direction. A glass cover may form at least a portion of the first surface. A display may be exposed through the glass cover. At least one protrusion is configured to absorb external impact to the electronic device. The protrusion protrudes from the first surface and is formed as part of the glass cover or protrudes through a hole in the glass cover.

Electronic device including glass cover and methods for fabricating same

Growing community of inventors

Gyeonggi-do, South Korea

Seo Hyun Kim