Kyocera Corporation

Sentaro Yamamoto

Youji Furukubo

Masanori Okamoto

Shoji Kohsaka

Katsuaki Masaki

Kenichi Tajima

Toshifumi Higashi

Takehiro Oda

Hideki Uchimura

Koichi Tanaka

Takafumi Yamaguchi

Takehiro Nishimura

Seiichiro Inai

Yoshihide Okawa

Daisuke Nishimura

Isamu Tanaka

Yuhei Matsumoto

Kazuya Shibata

Tomohiro Iwaida

A light-emitting-element housing member includes: a bottom base material having a first surface, and a mounting part on the first surface on which a light emitting element is to be mounted; and a frame member that includes side walls erected on the first surface to surround the mounting part, and an opening that penetrates through one of the side walls. The opening includes an inner edge having a first side and a second side, the first side extends along the first surface and is arranged at a position close to the bottom base material, and the second side extends along the first surface and is arranged at a position far from the bottom base material, and the second side is longer than the first side. An array of the plurality of light-emitting-element housing members, and a light emitting device are also described.

Light-emitting-element housing member, array member, and light emitting device

A light-emitting element housing member includes a substrate that is made of a ceramic and internally includes a deep-bottom-type space portion having an opening in at least one position thereof, wherein an inner wall of the space portion serves as a mounting part for a light-emitting element. A light-emitting element housing member includes a mounting part meant for mounting a light-emitting element and includes a substrate that includes a bottom base material having a rectangular shape in a planar view and a wall member provided on the bottom base material to enclose the mounting part in a U-shaped manner and have an opening in at least one portion thereof, wherein the substrate is integrally formed of a ceramic.

Light-emitting element housing member, array member, and light-emitting device

The present invention includes: a substrate, a rectangular frame-shaped substrate bank sectionprovided on the substrateand including four corner portionsA, and a metal layerprovided on a top surfaceAa of the substrate bank section. A top surfaceAa of the corner portionsA of the substrate bank sectionmay have an inclined portion S slanted downward. An electronic component housing package may have a lid welded onto the metal layerprovided on the substrate bank sectionof the electronic component storage substrate.

Electronic component storage substrate and housing package

The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Production method of photoelectric conversion device and solution for forming semiconductor

A sintered product of silicon nitride containing not smaller than 70 mol % of a .beta.-silicon nitride as well as an element of the Group 3a at least including Lu of periodic table and impurity oxygen, wherein when the content of the element of the Group 3a of periodic table and the content of the impurity oxygen are, respectively, expressed being reckoned as the amount of an oxide of the element of the Group 3a of periodic table (RE.sub.2 O.sub.3) and as the amount of SiO.sub.2 of impurity oxygen, their total amount is from 2 to 30 mol %, the molar ratio (SiO.sub.2 /RE.sub.2 O.sub.3) of the amount of the element of the Group 3a of periodic table reckoned as the oxide (RE.sub.2 O.sub.3) thereof to the amount of impurity oxygen reckoned as SiO.sub.2 is from 1.6 to 10, and the intergranular phase of the sintered product chiefly comprises a crystal phase consisting of the element of the Group 3a of periodic table, silicon and oxygen and a process for producing the same. The sintered product has a large strength from room temperature through up to high temperatures and maintains excellent resistance against oxidation even at high temperatures, and exhibits excellent resistance against creeping and excellent breaking toughness.

Sintered product of silicon nitride

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Kagoshima, Japan

Sentaro Yamamoto