Quanzhou Sanan Semiconductor Technology Co., Ltd.

Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Senpeng Huang

Junpeng Shi

Zhenduan Lin

Chen-ke Hsu

Shunyi Chen

Chen-Ke Hsu

Chih-Wei Chao

Weng-Tack Wong

Yanqiu Liao

Zhaowu Huang

Chang-Chin Yu

Jian Liu

Qiuxia Lin

Zhen-Duan Lin

Zhen-duan Lin

Ping Zhang

A LED device includes multiple LED chips each including opposite first and second surfaces, a side surface, and an electrode assembly disposed on the second surface and including first and second electrodes. The first surface of each of the LED chips is a light exit surface. The LED device further includes an electric circuit layer assembly disposed on the second surfaces of the LED chips and having opposite first and second surfaces and a side surface. The first surface is electrically connected to the first and second electrodes. The LED device further includes an encapsulating layer enclosing the LED chips and the electric circuit layer assembly to expose the second surface of the electric circuit layer assembly.

LED device and light emitting apparatus including the same

The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(λ), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(λ), P(λ) is the maximum light intensity within 380-780 nm, S(λ) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(λ) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(λ)=P(λ)/P(λ)−S(λ)/S(λ), −0.15<D(λ)<0.15.

White light LED package structure and white light source system

LED chip

A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.

Light-emitting diode device and white light emitting system

The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(&#x3bb;), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(&#x3bb;), P(&#x3bb;) is the maximum light intensity within 380-780 nm, S(&#x3bb;) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(&#x3bb;) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(&#x3bb;)=P(&#x3bb;)/P(&#x3bb;)&#x2212;S(W)/S(&#x3bb;), &#x2212;0.15&#x3c;D(&#x3bb;)&#x3c;0.15.

A light emitting device includes an LED chip, a light-transmissible member and a light-reflecting member. The LED chip has a plurality of interconnecting side surfaces having a roughened structure and a plurality of corners. The light-transmissible member covers the side surfaces and the corners and includes a light-transmissible material layer having a breadth value W(A) of a viscosity coefficient (A) range of the light-transmissible material, which satisfies a relation of W(A)&#x221d;B*D/C: where B represents a thickness of the light-transmissible material layer, represents a thickness of the LED chip measured from the first surface to the second surface, and D represents a roughness of the roughened structure. A method for manufacturing the light emitting device is also provided.

Method for manufacturing light emitting device

Growing community of inventors

Xiamen, China

Senpeng Huang