Applied Materials, Inc.

Other

Senh Thach

Jennifer Y Sun

Vijay D Parkhe

Konstantin Makhratchev

Wendell Glenn Boyd, Jr

Matthew James Busche

Masanori Ono

Ren-Guan Duan

Li Xu

Yixing Lin

Clifford Stow

Shun Jackson Wu

Kenneth S Collins

Arnold Kholodenko

Thomas Allen Graves

Hong Peng Wang

Dennis Stanley Grimard

Wing Lau Cheng

Dmitry Lubomirsky

Ananda H Kumar

Brian T West

Jie Yuan

Semyon L Kats

Xiaoming He

Xi Zhu

Yan Ye

Shamouil Shamouilian

Biraja Prasad Kanungo

Diana Xiaobing Ma

Vahid Firouzdor

Alexander M Veytser

Anisul Haque Khan

Lee Luo

Gerald Zheyao Yin

Thanh Ngoc Pham

Claes H Bjorkman

Robert W Wu

Xiao-Ming He

Michael G Chafin

Elmira Ryabova

Yeuk-Fai Edwin Mok

Gerhard M Schneider

James Douglas Dempster

Chang-Lin Hsieh

Wendell Glen Boyd, Jr

Danny D Wang

Dennis Koosau

Alvin Lau

Brian Sy Yuan Shieh

Robert Scott Clark

Kelly A McDonough

Jim Dempster

Daniel J Hofman

Alex Veytser

Shamouil Shamoulian

Paul Exline

Liang Guo Wang

Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content &#x3a3; D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (AlO), aluminum nitride (AlN), yttrium oxide (YO), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

High temperature electrostatic chuck bonding adhesive

Embodiments of the invention may generally provide a method and apparatus that is used to prepare new and used substrate support assemblies for use in typical semiconductor processing environments. Embodiments of the present invention generally relate to a method of coating a new substrate support assembly or a used substrate support assembly that is being refurbished. The deposited coating may include a surface enhancement and/or protective material that is configured to protect one or more of the components exposed to the processing environment during a semiconductor process. The substrate support assembly may be coated with a protective material and during the coating process, the substrate support assembly is maintained at a temperature that is less than or equal to 150&#xb0; C. by flowing a coolant through channels formed in a base of the substrate support assembly.

Method of processing a substrate support assembly

Embodiments disclosed herein include a method for minimizing chucking forces on a workpiece disposed on a electrostatic chuck within a plasma processing chamber. The method begins by placing a workpiece on an electrostatic chuck in a processing chamber. A plasma is struck within the processing chamber. A deflection force is monitored on the workpiece. A chucking voltage is applied at a minimum value. A backside gas pressure is applied at a minimum pressure. The chucking voltage and or backside gas pressure is adjusted such that the deflection force is less than a threshold value. And the chucking voltage and the backside gas pressure are simultaneously ramped up.

Real time monitoring with closed loop chucking force control

Implementations described herein provide a pixelated substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a cooling base comprising the substrate support assembly, which in turn, allows both lateral and azimuthal tuning of a substrate processed on the substrate support assembly. A processing chamber having a pixelated substrate support assembly and method for processing a substrate using a pixelated substrate support assembly are also provided.

Pixilated cooling, temperature controlled substrate support assembly

An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, a method for adjusting coolant flow in an electrostatic chuck includes heating a dielectric puck, the dielectric puck being for electrostatically gripping a silicon wafer. Heat is detected at a plurality of locations on a top surface of the dielectric puck, the locations each being thermally coupled to at least one of a plurality of coolant chambers of the electrostatic chuck. A plurality of valves are adjusted to control coolant flow into the coolant chambers based on the detected heat.

Electrostatic chuck with external flow adjustments for improved temperature distribution

A substrate support assembly comprises a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further comprises a protective layer covering an upper surface of the ceramic body, wherein the protective layer comprises at least one of yttrium aluminum garnet (YAG) or a ceramic compound comprising YAlOand a solid-solution of YO&#x2014;ZrO.

Substrate support assembly having a plasma resistant protective layer

A control system that includes deflection sensors which can control clamping forces applied by electrostatic chucks, and related methods are disclosed. By using a sensor to determine a deflection of a workpiece supported by an electrostatic chuck, a control system may use the deflection measured to control a clamping force applied to the workpiece by the electrostatic chuck. The control system applies a clamping voltage to the electrostatic chuck so that the clamping force reaches and maintains a target clamping force. In this manner, the clamping force may secure the workpiece to the electrostatic chuck to enable manufacturing operations to be performed while preventing workpiece damage resulting from unnecessary higher values of the clamping force.

Control systems employing deflection sensors to control clamping forces applied by electrostatic chucks, and related methods

An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones and a plurality of flow control valves are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

An electrostatic chuck is described with external flow adjustments for improved temperature distribution. In one example, an apparatus has a dielectric puck to electrostatically grip a silicon wafer. A cooling plate is fastened to and thermally coupled to the ceramic puck. A supply plenum receives coolant from an external source and a plurality of coolant chambers are thermally coupled to the cooling plate and receive coolant from the supply plenum. A return plenum is coupled to the cooling zones to exhaust coolant from the cooling zones. A plurality of adjustable orifices are positioned between the supply plenum and a respective one of the cooling zones to control the flow rate of coolant from the supply plenum to the cooling zones.

Electrostatic chuck with internal flow adjustments for improved temperature distribution

An electrostatic chuck includes a thermally conductive base having a plurality of heating elements disposed therein. A metal layer covers at least a portion of the thermally conductive base, wherein the metal layer shields the plurality of heating elements from radio frequency (RF) coupling and functions as an electrode for the electrostatic chuck. A plasma resistant dielectric layer covers the metal layer.

Single-body electrostatic chuck

Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Method of reducing plasma arcing on surfaces of semiconductor processing apparatus components in a plasma processing chamber

A method of creating a plasma-resistant thermal oxide coating on a surface of an article, where the article is comprised of a metal or metal alloy which is typically selected from the group consisting of yttrium, neodymium, samarium, terbium, dysprosium, erbium, ytterbium, scandium, hafnium, niobium or combinations thereof. The oxide coating is formed using a time-temperature profile which includes an initial rapid heating rage, followed by a gradual decrease in heating rate, to produce an oxide coating structure which is columnar in nature. The grain size of the crystals which make up the oxide coating is larger at the surface of the oxide coating than at the interface between the oxide coating and the metal or metal alloy substrate, and the oxide coating is in compression at the interface between the oxide coating and the metal or metal alloy substrate.

Method of producing a plasma-resistant thermal oxide coating

Plasma-resistant ceramics with controlled electrical resistivity

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Union City, CA, United States of America

Senh Thach