United Microelectronics Corp.

Seng Wah Liau

Yen-Chen Chen

Jen-Po Huang

Chien-Ming Lai

Hui-Ling Chen

Sheng-Yao Huang

Xu Yang Shen

Han Chuan Fang

Chin-Fu Lin

Chun-Yuan Wu

Bin-Siang Tsai

Kuo-Chih Lai

Ai-Sen Liu

Chun-Ling Lin

Yang-Ju Lu

Ko-Wei Lin

Yuheng Liu

Qin Li

Kiet Houng Chow

An oxide semiconductor device includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate. The source electrode and the drain electrode are disposed on the first patterned oxide semiconductor layer. The sidewall spacer is disposed on a sidewall of the first patterned oxide semiconductor layer. The sidewall spacer may be used to improve the performance of blocking impurities from entering the first patterned oxide semiconductor layer via the sidewall, and the electrical performance and the reliability of the oxide semiconductor device may be enhanced accordingly.

Manufacturing method of oxide semiconductor device

Oxide semiconductor device and manufacturing method thereof

A method for fabricating a metal-insulator-metal (MIM) capacitor includes the steps of: forming a capacitor bottom metal (CBM) layer on a material layer; forming a silicon layer on the CBM layer; forming a capacitor dielectric layer on the silicon layer; and forming a capacitor top metal (CTM) layer on the capacitor dielectric layer.

Method for fabricating a MIM capacitor

An image sensor includes a plurality of color filters and an anti-reflective layer. The color filters are located on a substrate. The anti-reflective layer is located between the substrate and the color filters, and parts of the anti-reflective layer corresponding to at least two of the color filters have different thicknesses. Moreover, an image sensing process including the following steps is also provided. An anti-reflective layer is formed on a substrate. A plurality of color filters is formed on the anti-reflective layer, wherein parts of the anti-reflective layer right below at least two of the color filters have different thicknesses.

Image sensor and process thereof

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Singapore, Singapore

Seng Wah Liau