Agency for Science, Technology and Research

Data Storage Institute

Seng Ghee Tan

Tow Chong Chong

Thomas Yun Fook Liew

Kie Leong Teo

Mansoor B A Jalil

Udaya Ahangama W Silva

Yun Fook Liew

Teck Ee Loh

The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.

Magneto-electric field effect transistor for spintronic applications

A method and apparatus are provided for efficiently testing magnetic media in which a read level test is performed using an approximation for an average signal level in determining a test threshold and while reading data and testing against the approximate average read signal level, the data signal level is averaged to determine the real average read signal and this value is then used to adjust the results of the comparisons performed against the approximate average read level.

Method and apparatus for high throughput media defect testing using true reference value

Growing community of inventors

Singapore, Singapore

Seng Ghee Tan