Applied Materials, Inc.

Sen-Hou Ko

Hung Chih Chen

Steven M Zuniga

Manoocher Birang

Paul D Butterfield

Eugene Gantvarg

Thomas H Osterheld

Ilya Perlov

Fred Conrad Redeker

Shijian Li

Lakshmanan Karuppiah

Ramin Emami

Liang-Yuh Chen

Stan D Tsai

Wei-Yung Hsu

Antoine P Manens

Kapila P Wijekoon

Feng Quan Liu

Harry Q Lee

Yan Wang

Shou-Sung Chang

Alain Duboust

Hui W Chen

Charles C Garretson

Madhavi R Chandrachood

Yongqi Hu

Siew Neo

Gary C Ettinger

Mohsen Salek

Yuan Tian

John M White

Boguslaw A Swedek

Stephen J Blumenkranz

Dominic J Benvegnu

Lizhong Sun

Donald J Olgado

Allen L D'Ambra

Norm Shendon

Abraham Ravid

William L Guthrie

Mario Dave Silvetti

John H Prince

Ho Seon Shin

James Chang Wang

Kevin H Song

Michael T Sherwood

Gerald John Alonzo

Ginetto Addiego

Shi-Ping Wang

Tsungnan Cheng

Paul V Miller

James C Nystrom

Yufei Chen

Zhenhua Zhang

Ricardo Martinez

Adrian Blank

Tom Osterheld

Alfred Abraham Goldspiel

Erik C Wasinger

Iiya Perlov

Richard V Rafloski

Hung K Nguyen

Eashwer Kollata

Birang Manoocher

Doyle Edward Bennett

A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the first pad holder rotatable on a second axis disposed parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, the second pad holder rotatable on a third axis parallel to the first axis and the second axis.

Methods and apparatus for post-chemical mechanical planarization substrate cleaning

Embodiments of the present invention relates to an apparatus and method for cleaning a substrate using a disk brush. One embodiment provides a substrate cleaner comprising a substrate chuck disposed in the processing volume, and a brush assembly disposed in the processing volume, wherein the brush assembly comprises a disk brush movably disposed opposing the substrate chuck, and a processing surface of the disk brush contacts a surface of the substrate on the substrate chuck.

Disk-brush cleaner module with fluid jet

A method and apparatus for cleaning a substrate after chemical mechanical planarizing (CMP) is provided. The apparatus comprises a housing, a substrate holder rotatable on a first axis and configured to retain a substrate in a substantially vertical orientation, a first pad holder having a pad retaining surface facing the substrate holder in a parallel and space apart relation, the first pad holder rotatable on a second axis rotatable parallel to the first axis, a first actuator operable to move the pad holder relative to the substrate holder to change a distance defined between the first axis and the second axis, and a second pad holder disposed in the housing, the second pad holder having a pad retaining surface facing the substrate holder in a parallel and spaced apart relation, wherein the second pad holder is couple with a rotary arm.

Disk/pad clean with wafer and wafer edge/bevel clean module for chemical mechanical polishing

A method and apparatus for conditioning a processing surface of a cylindrical roller disposed in a brush box is described. In one embodiment, a brush box is described. The brush box includes a tank having an interior volume and a pair of cylindrical rollers at least partially disposed in the interior volume, each of the cylindrical rollers being rotatable about a respective axis, an actuator assembly coupled to each of the cylindrical rollers to move the respective cylindrical roller between a first position where the cylindrical rollers are in proximity and a second position where the cylindrical rollers are spaced away from each other, and a conditioning device for each of the cylindrical rollers, each conditioning device including a conditioner disposed in the interior volume, the conditioner contacting an outer surface of each of the cylindrical rollers when the rollers are in the second position.

Apparatus and methods for brush and pad conditioning

Embodiments of the present invention generally provide an improved conditioning module and conditioning disks for improved pressure distribution during the process of conditioning a polishing pad of a chemical mechanical polishing (CMP) system. In one embodiment, a conditioning module comprising multiple, small conditioning disks is provided. In one embodiment, a conditioning disk having a compliant backing member is provided. In one embodiment, the compliant backing member comprises a semi-rigid backing member cut into a spiral shape to provide compliancy. In another embodiment, the compliant backing member comprises a fluid-pressurized, flexible membrane. Each embodiment of the present invention provides an improved pressure distribution across the face of each conditioning disk, resulting in increased disk life as well as increased conditioning rate and uniformity.

Polishing pad conditioner

Apparatus and methods are provided to polish an edge of a substrate. The invention includes a polishing head adapted to retain a backing pad having a selected contour, wherein the polishing head is adapted to press the backing pad against an edge of a substrate. Numerous other aspects are provided.

Methods and apparatus for removal of films and flakes from the edge of both sides of a substrate using backing pads

Systems, methods and apparatus are provided for determining a substrate polishing endpoint. The invention includes a light source adapted to transmit light to an edge of a substrate; one or more detectors adapted to detect an arrangement of light reflected from the substrate edge; and a controller adapted to determine a polishing endpoint for the substrate edge based on the arrangement of reflected light. Numerous other aspects are provided.

Methods and apparatus for measuring substrate edge thickness during polishing

Apparatus and methods adapted to polish an edge of a substrate include a polishing film, a frame adapted to tension and load the polishing film so that at least a portion of the film is supported in a plane, and a substrate rotation driver adapted to rotate a substrate against the plane of the polishing film such that the polishing film is adapted to apply force to the substrate, contour to an edge of the substrate, the edge including at least an outer edge and a first bevel, and polish the outer edge and the first bevel as the substrate is rotated. Numerous other aspects are provided.

Methods and apparatus for processing a substrate

Embodiments of an apparatus for conditioning a processing pad are provided. In one embodiment, an apparatus for conditioning a processing pad includes a member having a bottom surface selectively maintained in a non-planar orientation and an abrasive disposed on the bottom surface of the member. The abrasive is configured for conditioning a processing pad. The member and abrasive have a profile that produces a non-planar processing pad surface.

Apparatus for conditioning processing pads

A method of operating a polishing apparatus in which a substrate is held with a carrier head supported by a movable support of the polishing apparatus, the substrate is brought into contact with a polishing surface at a polishing station of the polishing apparatus and the substrate is polished, the substrate is removed from the polishing surface, the support moves to transfer the carrier head to a different station of the polishing apparatus, and the polishing surface is conditioned. The conditioning overlaps with at least one of removing the substrate or moving the support.

Polishing pad conditioning process

Embodiments of a flexible pad conditioner for conditioning a processing pad are provided. The pad conditioner includes an arc-shaped member having an abrasive bottom surface configured for conditioning the processing pad. Means are provided to apply a downward force as well as to oscillate the pad conditioner. Further means may be provided to vary the downward force along the length of the pad conditioner. In one embodiment, a plurality of actuators may be coupled to a top surface of the member and adapted to selectively provide an independently controllable force against the member to finely control the conditioning profile.

Method for conditioning processing pads

Embodiments of a polishing article for processing a substrate are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer has an exposed surface adapted to polish a substrate. The fabric layer may be woven or non-woven. The conductive layer may be comprised of a soft metal and, in one embodiment, the exposed surface may be planar.

Conductive polishing article for electrochemical mechanical polishing

Methods and compositions are provided for planarizing substrate surfaces with low dishing. Aspects of the invention provide methods of using compositions comprising an abrasive selected from the group consisting of alumina and ceria and a surfactant for chemical mechanical planarization of substrates to remove polysilicon.

Low cost and low dishing slurry for polysilicon CMP

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Sunnyvale, CA, United States of America

Sen-Hou Ko