North American Philips Corporation

Sel B Colak

Efim S Goldburt

John J Zola

Richard A Stolzenberger

Valdimir Rumennik

An actively phase matched waveguide structure suitable for use as a frequency doubling device is described. The phase matching of the waveguide is controlled by application of a control voltage. The waveguide includes first and second non-linear optical layers of material having differing indexes of refraction forming a waveguide. Disposed on the surface of the waveguide is a layer of transparent semiconductor material disposed between two transparent electrodes. The index of refraction of the transparent semiconductor material varies with the potential applied to the electrode and thereby varies the phase matching of the waveguide as a whole.

Actively phased matched frequency doubling optical waveguide

An actively phase matched waveguide structure suitable for use as a frequency doubling device is described. The device includes a non-linear optical waveguide and phase matching of the waveguide is controlled by an electrically operated light modulator which is spaced apart from the waveguide. The modulator includes one or more electrodes disposed on a substrate and an elastomeric transparent gel which has a metallic coating on its upper surface. Application of a voltage between the metallic upper surface and the electrodes causes a deformation in the gel which alters the gap between the upper surface of gel and thus provides phase matching.

Frequency doubling optical waveguide with active phase matching

A lateral insulated gate transistor includes both a surface-adjoining drain region and a surface-adjoining anode region in an epitaxial surface layer. An anode-drain electrode is connected to the anode region and coupled to the drain region. In one embodiment of the device, the drain and anode regions are in direct contact, and the anode-drain electrode directly contacts both regions. In a second embodiment, the anode region is provided in a high-doped surface-adjoining region rather than in direct contact with the drain region, and the anode-drain electrode is coupled to the drain region through a resistive element. A third embodiment employs a Schottky contact connected to the anode-drain electrode. Lateral isolated gate rectifiers in accordance with the invention offer the advantages of low 'on' resistance, high breakdown voltage and fast switching characteristics.

Fast switching lateral insulated gate transistors

An active waveguide device is provided for doubling the frequency of an applied light wave. The device includes first and second optical waveguides which are coupled through a separating gap. The coupling can be precisely adjusted to maximize the doubling efficiency by adjusting the gap dimension. The device is particularly suitable for producing higher frequency blue radiation from lower frequency infrared radiation which is readily produced by semiconductor lasers.

Gap tuned optical waveguide device

Wide band gap, single conductivity type semiconductor light emitting diodes (LED's) feature a bias potential across the device below that required for carrier multiplication by avalanche breakdown, together with separate means for carrier introduction, such as an electron beam of a pn junction diode, to achieve light emission. The addition of Fabry-Perot surfaces converts the LED to a semiconductor laser. Efficiency enhancing heterostructure, including potential wells and staircases, may be added to the device. Arrays of such devices on a substrate may be scanned by an electron beam to display video information.

Wide band gap semiconductor light emitting devices

A lateral double-diffused MOS transistor includes an intermediate semiconductor layer of the same conductivity type as the channel region which extends laterally from the channel region to beneath the drain contact region of the device. This intermediate semiconductor layer substantially improves the punchthrough and avalanche breakdown characteristics of the device, thus permitting operation in the source-follower mode, while also providing a compact structure which features a relatively low normalized 'on' resistance.

Lateral double-diffused MOS transistor devices suitable for

A lateral double-diffused MOS transistor includes a field-shaping semiconductor layer which serves to improve the breakdown voltage and/or on-resistance characteristics of the device. The field-shaping layer redistributes the electrical field in the device during operation in order to eliminate electrical field crowding in portions of the device where breakdown would otherwise first occur. The field shaping layer may be a buried layer, a surface layer, or a composite layer having both buried and surface layer portions.

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Ossining, NY, United States of America

Sel B Colak