Samsung Electronics Co., Ltd.

Sejeong Jang

Jaesub Kim

Jaewon Song

Kyungryun Kim

Heewon Lee

Sangkwon Moon

Jong-Nam Baek

Dae-Jin Kim

Nam-Ho Kim

Sang-Ryong Park

A method of operating a storage device with a memory includes partitioning an entire area of a first namespace into at least one area based on a reference size. The partitioning is performed in response to a namespace creating request from a host that includes size information corresponding to the entire area of the first namespace. The method further includes partitioning a logical address space of the memory into a plurality of segments, allocating a first segment of the plurality of segments to a first area of the at least one area, and storing mapping information of the first area and the first segment. A size of the logical address space is greater than a size of a physical storage space of the memory identified by the host.

Storage device with expandible logical address space and operating method thereof

Storage device with expandable logical address space and operating method thereof

A nonvolatile memory device includes a memory cell array that includes memory blocks, wherein each of the memory blocks includes pages each including memory cells, a row decoder circuit that selects one of the pages from a selected memory block of the memory blocks in a write operation and selects memory cells of a close unit from the selected memory block in a close operation, and a page buffer circuit that writes data into memory cells of a page selected by the row decoder circuit in the write operation and writes dummy data into the memory cells of the close unit selected by the row decoder circuit in the close operation. The close unit includes one or more pages, and, in the close operation, the row decoder circuit adjusts a size of the close unit.

Nonvolatile memory device, storage device including nonvolatile memory device, and method of accessing nonvolatile memory device

A method for operating a storage device including a flash memory, comprising: determining a data reliability level of the flash memory; comparing the data reliability level with a threshold; and changing an operating condition of the flash memory to improve the data reliability level of the flash memory when the data reliability level of the flash memory is lower than the threshold.

Method for operating storage device changing operation condition depending on data reliability

An operating method of a storage device is provided. The storage device includes a nonvolatile memory and a memory controller to control the nonvolatile memory. Temperature is detected. A current weighted time is calculated using the temperature. Data is read from the nonvolatile memory using a read voltage level which is adjusted based on the current weighted time. The current weighted time is determined according to an amount of charges leaked from memory cells storing the data at the temperature.

Storage device, including nonvolatile memory and memory controller, operating method of storage device and method of accessing storage device

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Hwaseong-si, South Korea

Sejeong Jang