Nippon Soken, Inc.

Nippon Steel Corporation

Nippondenso Co., Ltd.

Seizi Huzino

Tadashi Hattori

Minoru Ohta

Kazuhiko Miura

Kenji Kanehara

Mitutaka Katada

Hisasi Kawai

Tokio Kohama

Tsuneyuki Egami

Hideki Obayashi

Minoru Nishida

Nobuyoshi Sakakibara

Kazuhiro Tsuruta

Naohito Mizuno

Michitoshi Onoda

Masami Yamaoka

Yoshiyasu Ando

Toshiyuki Kawai

Takeshi Tanaka

Masao Kodera

Kunihiko Sasaki

Masanori Fukutani

Fumio Ohara

Masumi Arai

Kazunori Kawamoto

Shinya Mizuki

A semiconductor circuit structure including a semiconductor substrate portion and at least one region provided on one main surface thereof insulatedly isolated from other regions provided on the same surface, by burying means made of an oxide film, the burying means including a bottom flat portion and at least one side wall portion provided at least in the vicinity of an edge portion of and integrally formed with the bottom flat portion, thereby a semiconductor circuit structure provided with a plurality of insulatedly isolated regions on a main surface thereof and having a high withstand voltage can be obtained in a short production process.

Semiconductor substrate structure for producing two isolated circuits on

A semiconductor circuit structure including a semiconductor substrate portion and at least one region provided on one main surface thereof insulatedly isolated from other regions provided on the same surface, by an burying means made of an oxide film, the burying means including a bottom flat portion and at least one side wall portion provided at least in the vicinity of an edge portion of and integrally formed with the bottom flat portion, thereby a semiconductor circuit structure provided with a plurality of insulatedly isolated regions on a main surface thereof and having a high withstand voltage can be obtained in a short production process.

Semiconductor circuit structure and method for making the same

Semiconductor chips are mounted in a supporting semiconductor substrate, with matching anisotropic (crystal plane) faces on the chips and substrate. The chips may extend above the substrate to facilitate connection together.

Crystal-etched matching faces on semiconductor chip and supporting

In a method of producing a semiconductor device, an amorphous silicon layer is deposited on a polycrystalline silicon layer formed on an insulator layer (SiO.sub.2). Ions are implanted into the amorphous silicon layer while heat treating the amorphous silicon layer at a low temperature thereby forming a solid-phase growth layer, and a transistor is formed of the solid-phase growth layer.

Polycrystalline silicon active layer for good carrier mobility

A semiconductor pressure sensor having a cylindrical housing with an opening formed at its tip end which is exposed to a pressure atmosphere and a metal diaphragm for receiving pressure, which is formed in a wall of the cylindrical housing defining the opening. A metal oxide layer is formed in a surface of the metal diaphragm by oxidizing the surface of the metal diaphragm, and a glass layer is formed on the metal oxide layer. A semiconductor chip, on which a strain gauge is formed, is firmly and surely bonded to the metal diaphragm through the glass layer by virtue of the metal oxide layer. This semiconductor pressure sensor can measure high pressure with sufficient sensitivity and high accuracy.

Semiconductor pressure sensor and method for bonding semiconductor chip

A thin film electroluminescent element has a substrate, a transparent electrode formed on the substrate, a luminescent film wherein two kinds of luminescent centers are distributed in layers within a basic luminescent material, formed on the transparent electrode through an insulating film, and a back electrode formed on the luminescent film through another insulating film. The luminescent film of this thin film electroluminescent element can emit white light of excellent tone, including lights of three primary colors with sufficiently large luminous intensity.

Thin film electroluminescent element

In a direct-heated flow measuring apparatus including a substrate having a film resistance pattern and a supporting member for supporting the substrate, the supporting member has good heat dissipation characteristics. Provided between the substrate and the supporting member is a heat transfer throttling portion.

Direct-heated flow measuring apparatus having improved response

In a direct-heated flow measuring apparatus including a film resistor having a substrate supported by a supporting member in a passage, at least one face of the substrate on the upstream side thereof is sloped with respect to a fluid stream within the passage.

Direct-heated flow measuring apparatus having improved sensitivity

A semiconductor pressure sensor having a cylindrical housing with an opening formed at its tip end which is exposed to a pressure atmosphere and a metal diaphragm for receiving pressure which is formed in a wall of the cylindrical housing defining the opening. A metal oxide layer is formed in a surface of the metal diaphragm by oxidizing the surface of the metal diaphragm, and a glass layer is formed on the metal oxide layer. A semiconductor chip, on which a strain gauge is formed, is firmly and surely bonded to the metal diaphragm through the glass layer by virtue of the metal oxide layer. This semiconductor pressure sensor can measure high pressure with sufficient sensitivity and high accuracy.

Semiconductor pressure sensor with method diaphragm

A direct-heated gas-flow measuring apparatus including a measuring tube disposed in the gas stream, a film resistor for generating heat and detecting the temperature thereof, and a feedback control circuit for controlling the heat generated by the film resistor so that the temperature of the film resistor is a predetermined value. Provided at least at the upstream side of the film resistor near thereto is a shield for reducing the accumulation of deposits on the film resistor. The shield and the film resistor have substantially the same thickness to satisfy the condition:

Direct-heated gas-flow measuring apparatus

In a direct-heated flow measuring apparatus including a film resistor having a substrate and a resistance layer thereon, the substrate is supported by a supporting member in a passage. Provided between the substrate and the supporting member is an adiabatic member for enhancing the adiabatic effect of the resistance layer. The substrate is adhered by adhesives having an excellent thermal conductivity coefficient to the adiabatic member, and the supporting member is also adhered by adhesives having an excellent thermal conductivity coefficient to the adiabatic member.

Direct-heated flow measuring apparatus having uniform characteristics

A direct-heated gas-flow measuring apparatus including a measuring tube disposed in the gas stream, a film resistor for generating heat and detecting the temperature thereof, and a feedback control circuit for controlling the heat generated by the film resistor so that the temperature of the film resistor is a predetermined value. Provided in a supporting portion of the film resistor for supporting it to the measuring tube is an aperture for throttling the heat transfer thereof.

A microwave probe has a cylindrical support made of stabilized zirconia being excellent in heat insulation, and the cylindrical support is threadably installed at a partitioning wall to partition an atmosphere of high temperature. The support is provided at the center with a through hole, and an antenna for transmitting or receiving microwave is installed at one opening of the through hole positioning at outside of the partitioning wall, and a metal ring member is installed at other opening of the through hole positioning within the partitioning wall. The transmitting and receiving antenna and the ring member are fixed to respective openings by a ceramic adhesive which is filled in the through hole and excellent in heat insulation. A part of the ring member projects in the atmosphere. A rotary body breakage detecting apparatus has the microwave probe installed at a cabinet wall to cover a wing body rotating in an atmosphere of high temperature, and a microwave oscillator and a microwave detector are connected to the probe through a circulator. A breakage detecting circuit is connected to the microwave detector. The breakage detecting circuit detects that peak value of the receiving signal outputted from the detector (the signal pulsating with rotation of the wing body) varies beyond a prescribed range, and generates signal informing the breakage of the wing body.

Microwave probe and rotary body detecting apparatus using the same

In a direct-heated flow measuring apparatus including an electric heater of a film resistor type and a temperature-detecting resistor for detecting the temperature within a passage, the flow rate thereof is measured by a sensing circuit. The temperatures of the electric heater and the temperature of the temperature-detecting resistor are compared. The measuring operation of the sensing circuit is stopped when the temperature within the passage is abnormal as indicated by this comparison.

Growing community of inventors

Anjo, Japan

Seizi Huzino