Ngk Insulators, Inc.

Seiya Inoue

Tatsuya Kuno

Hiroshi Takebayashi

Natsuki Hirata

Reo Watanabe

Kenji Yonemoto

Yuma Iwata

Masaki Ishikawa

Shinya Yoshida

Ikuhisa Morioka

Tomoyuki Minami

Taro Usami

Aoi Saito

A wafer placement table is a wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed and includes a top base including a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base, a bottom base on a top surface of which a flow channel groove defining a side wall and a bottom of the refrigerant flow channel is provided, and a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside.

Wafer placement table

A wafer placement table includes a ceramic base, a first cooling base, and a second cooling base. The ceramic base has a wafer placement surface and incorporates a wafer attracting electrode and a heater electrode. The first cooling base is bonded via a metal bonding layer to a surface of the ceramic base on a side opposite to the wafer placement surface and has a first refrigerant flow channel capable of switching between supply and stop of supply of first refrigerant. The second cooling base is attached via a space layer, capable of supplying heat-transfer gas, to a surface of the first cooling base on a side opposite to the metal bonding layer and has a second refrigerant flow channel capable of switching between supply and stop of supply of second refrigerant.

A member for semiconductor manufacturing apparatus includes a ceramic plate including a horizontal and circular wafer placement surface, and a horizontal and annular focus ring placement surface provided on an outer circumference of the wafer placement surface at a position lower than the wafer placement surface by one step, and a connection part that connects the wafer placement surface and the focus ring placement surface; and a cooling plate provided on a lower surface of the ceramic plate, wherein the connection part has a lateral surface of a circular truncated cone with a diameter that increases from the wafer placement surface to the focus ring placement surface, and the diameter of the upper surface of the circular truncated cone matches the outer diameter of the wafer placement surface, and the diameter of the lower surface of the circular truncated cone matches the inner diameter of the focus ring placement surface.

Member for semiconductor manufacturing apparatus

A feeder member is used to supply electricity to an electrode embedded in a ceramic base. The feeder member includes an electrode-side terminal that is made of a high-melting-point metal containing material and joined to the electrode, an intermediate member that is made of a Cu containing material and directly joined to the electrode-side terminal without using a brazing material, a cable support member that is made of a Cu containing material and joined to the intermediate member, and a cable that is made of a Cu containing material and that has one end whose end surface is welded to the cable support member.

Feeder member and wafer placement table

A wafer placement table includes a central ceramic base that has an upper surface including a wafer placement surface, an outer circumferential ceramic base that has an upper surface including a focus ring placement surface, and a cooling base that includes a central portion, an outer circumferential portion, and a coupler that couples the central portion and the outer circumferential portion with each other. The cooling base has a central refrigerant flow path that is formed in the central portion and an outer circumferential refrigerant flow path that is formed in the outer circumferential portion. The coupler has an upward groove that open from an upper surface and that have an annular shape, and a downward groove that opens from a lower surface, that have a ceiling surface higher than a bottom surface of the upward groove, and that have an annular shape.

A wafer placement table includes: a ceramic plate having a wafer placement surface on its upper surface and incorporating an electrode; an electrically conductive plate provided on a lower surface side of the ceramic plate; an electrically conductive bonding layer that bonds the ceramic plate with the electrically conductive plate; a gas intermediate passage embedded in the electrically conductive bonding layer or provided at an interface between the electrically conductive bonding layer and the electrically conductive plate; a plurality of gas supply passages extending from the gas intermediate passage through the electrically conductive bonding layer and the ceramic plate to the wafer placement surface; and a gas introduction passage provided so as to extend through the electrically conductive plate and communicate with the gas intermediate passage, the number of the gas introduction passages being smaller than the number of the gas supply passages communicating with the gas intermediate passage.

A member for a semiconductor manufacturing apparatus, includes: a base substrate that has a wafer-placement-table support and a focus-ring-placement-table support; a focus-ring placement table that is joined to the focus-ring-placement-table support; a wafer placement table that is separate from the focus-ring placement table, that overlaps an inner peripheral portion of the focus-ring placement table in plan view, and that is joined to the inner peripheral portion of the focus-ring placement table and to the wafer-placement-table support; an internal space that is surrounded by a lower surface of the wafer placement table, an outer peripheral surface of the wafer-placement-table support, an inner peripheral surface of the focus-ring placement table, and an upper surface of the focus-ring-placement-table support; and a communication path that is provided at the base substrate and that causes the internal space and an outside of the base substrate to communicate with each other.

A wafer placement table includes a ceramic plate having a wafer placement surface and an electrode, a cooling plate made of a metal-ceramic composite and having a cooling medium passage, and a joining layer configured to join the plates. A distance from the wafer placement surface to at least one of upper base or lower base of the cooling medium passage is not constant. The cooling plate has a plurality of plate portions including a first plate portion and a second plate portion, and has a structure in which the plurality of plate portions metal-joined to each other. The first plate portion has a first passage portion which is a through groove having the same shape as the cooling medium passage. The second plate portion has a second passage portion which is a bottomed groove disposed in at least part of a region facing the first passage portion.

A wafer placement includes an alumina substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a brittle cooling substrate which is bonded to a lower surface of the alumina substrate, and in which a refrigerant flow path is formed; and a ductile connection member stored in a storage hole opened in a lower surface of the cooling substrate in a state of restricted axial rotation and in a state of being engaged with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section, wherein the storage hole is provided in the refrigerant flow path.

A wafer placement table includes an alumina base that has a wafer placement surface on its upper surface, and incorporates an electrode; a brittle cooling base bonded to a lower surface of the alumina base; and a ductile connection member stored in a storage hole, opened in a lower surface of the cooling base, in a state of restricted axial rotation and in a state of engaging with an engagement section of the storage hole, the ductile connection member having a male thread section or a female thread section.

A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.

A member for a semiconductor manufacturing apparatus includes: a ceramic plate that has a wafer placement surface at an upper surface thereof; a plug disposition hole that extends through the ceramic plate in an up-down direction and that has a truncated conical space whose upper opening is larger than a lower opening thereof; a truncated conical plug that is disposed in the plug disposition hole, that allows gas to flow in the up-down direction, and whose upper surface is larger than a lower surface thereof; an adhesive layer that is provided between the plug disposition hole and the truncated conical plug; an electrically conductive baseplate that is joined to a lower surface of the ceramic plate through a joint layer; and a gas supply path that is provided in the baseplate and the joint layer and that supplies gas to the truncated conical plug.

A member for a semiconductor manufacturing apparatus, includes: a ceramic plate that has a ceramic plate through hole; an electroconductive base plate that has a base plate through hole and that is disposed on a lower surface side of the ceramic plate; an insulating sleeve which is inserted into the base plate through hole and of which an outer peripheral surface is adhered to an inner peripheral surface of the base plate through hole via an adhesion layer; and a sleeve through hole that passes through the insulating sleeve in the up-down direction and that communicates with the ceramic plate through hole. The insulating sleeve has a tool engaging portion that is engageable with an external tool, and upon being engaged with the external tool, the tool engaging portion transmits rotation torque of the external tool to the insulating sleeve.

A wafer placement table includes: a ceramic substrate having a wafer placement surface at an upper surface, and incorporating an electrode; a cooling substrate which is bonded to a lower surface of the ceramic substrate, and in which a refrigerant flow path is formed; a power supply terminal connected to the electrode; and a power supply terminal hole vertically penetrating the cooling substrate and storing the power supply terminal. The power supply terminal hole intersects with the refrigerant flow path.

A wafer placement table includes a ceramic base including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding the ceramic base and the cooling base, a stepped hole penetrating the bonding layer and the cooling base and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion; and a connection terminal bonded to the electrode and inserted through the stepped insulating pipe.

Growing community of inventors

Handa, Japan

Seiya Inoue