Jsr Corporation

Seitaro Hattori

Masahiro Akiyama

Masaki Obi

Koichi Hasegawa

Atsushi Shiota

Takahiko Kurosawa

Tatsuya Yamanaka

Terukazu Kokubo

Manabu Sekiguchi

Hajime Tsuchiya

Michihiro Mita

A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

Laminate and method of forming the same, insulating film, and semiconductor device

A process for producing a film forming composition, the process including hydrolyzing and condensing: (A) at least one silane compound selected from a compound (A-1) shown by the following general formula (1), a compound (A-2) shown by the following general formula (2), and a compound (A-3) shown by the following general formula (3),RSi(OR)&#x2003;&#x2003;(1)Si(OR)&#x2003;&#x2003;(2)R(RO)Si&#x2014;(R)&#x2014;Si(OR)R&#x2003;&#x2003;(3); and (B) a cyclic silane compound shown by the following general formula (4): 

Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film

A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent, 

Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device

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Tsukuba, Japan

Seitaro Hattori