Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Shinko Electric Industries Co., Ltd.

Seishi Oida

Yukio Yamaguchi

Nobuhiro Suematsu

Yuichiro Yamada

Takeshi Morikawa

Takashi Ogawa

Kouji Oomori

Masayuki Yukawa

Kazumitsu Seki

Takashi Yoshie

Takahiro Nakano

Shigeki Sakaguchi

Kouji Omori

Toshiyuki Nakazawa

Sigeki Sakaguchi

Koji Ohmori

Kenrou Jitumori

Kouichi Kadosaki

Harunobu Satou

Yoshito Miyahara

A semiconductor device of the present invention includes a circuit board having a number of electrode portions on the front side and the underside, an electronic circuit element such as a semiconductor chip bonded to the electrode portions on the front side of the circuit board and composing an electronic circuit; and a plurality of ball electrodes for external connection, the ball electrodes being formed on the electrode portions on the underside of the circuit board. Of the electrode portions on the underside of the circuit board, an electrode portion on the outer periphery is formed larger than an electrode portion on the inner periphery. The plurality of ball electrodes are solder balls heated and melted on the electrode portions on the underside of the board so as to form an alloy on the interfaces, the solder balls containing tin and silver but not containing lead.

Semiconductor device

A lead frame base is coated with a four-layer plating. The four-layer plating includes an underlayer plating (Ni), a palladium plating, a silver plating and a gold plating arranged in this order from bottom to top.

Lead frame having outer leads coated with a four layer plating

On a surface of an electronic component facing a substrate, a plurality of electrode terminals are provided which are of circular plane shapes. On regions of the main surface of the substrate facing the electrode terminals, a plurality of interconnect electrodes are provided which are of circular plane shapes.

A semiconductor device includes a semiconductor element having a plurality of element electrodes and a ball electrode electrically connected to at least one element electrode out of the plurality of element electrodes. The ball electrode is made of a Sn&#x2014;Zn-based lead-free solder including 7 through 9.5 wt % of zinc and the remaining of tin.

Semiconductor device, semiconductor packaging method, assembly and method for fabricating the same

A method for manufacturing a semiconductor chip (,) which is bonded on a die pad (,) of a leadframe, and inner leads (,) are electrically connected to electrode pads of the semiconductor chip (,) with metal fine wires (,). The die pad (,), semiconductor chip (,) and inner leads are molded with a resin encapsulant (,). However, no resin encapsulant (,) exists on the respective back surfaces of the inner leads (,), which protrude downward from the back surface of the resin encapsulant (,) so as to be external electrodes (,).

Resin molded semiconductor device and method for manufacturing the same

According to the present invention, a method for manufacturing a resin-molded semiconductor device by interposing a sealing sheet within a molding die for encapsulating a lead frame, on which a semiconductor chip has been bonded, with a molding compound, is provided. In adhering the sealing sheet to the lead frame and encapsulating the lead frame with the molding compound, tension is applied to the sealing sheet.

Method for manufacturing resin-molded semiconductor device

Growing community of inventors

Kyoto, Japan

Seishi Oida