Tokyo Electron Limited

Fujitsu Corporation

Tokyo Electron Kabushiki Kaisha

Seishi Murakami

Tatsuo Hatano

Takaya Shimizu

Toshiya Suzuki

Kunihiro Tada

Takayuki Ohba

Satoshi Wakabayashi

Takamichi Kikuchi

Einosuke Tsuda

Hiroaki Ashizawa

Yuichiro Fujikawa

Takayuki Kamaishi

Hideaki Yamasaki

Akitaka Shimizu

Tsuneyuki Okabe

Kensaku Narushima

Takashi Sakuma

Masahiko Tomita

Eiichi Komori

Takashi Kobayashi

Daisuke Toriya

Kentaro Asakura

Hideo Nakamura

Masato Koizumi

Masaki Koizumi

Kozo Kai

Susumu Kato

Yosuke Serizawa

Yoshikazu Ideno

Shimpei Jinnouchi

Keishi Akiba

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

Raw material supply apparatus and raw material supply method

A film forming method includes: repeatedly performing a source gas adsorption process including supplying a source gas containing a metal element to form a nitride film on a substrate in a chamber and purging a residual gas, and a nitriding process including supplying a nitriding gas onto the substrate and purging a residual gas; and supplying a hydrazine-based compound gas as a part or all of the nitriding gas.

Semiconductor film forming method using hydrazine-based compound gas

A substrate processing apparatus includes a process container; a process gas supply mechanism; a substrate loading table; a temperature adjusting medium passage; a temperature adjusting medium extraction mechanism; a heater; and a temperature controller. The temperature controller is configured to adjust a temperature of a target substrate to a first temperature by allowing a temperature adjusting medium to flow through the temperature adjusting medium passage of the substrate loading table; and adjust the temperature of the target substrate to a second temperature higher than the first temperature by extracting the temperature adjusting medium of the temperature adjusting medium passage using the temperature adjusting medium extraction mechanism while heating the target substrate using the heater.

Substrate processing apparatus and substrate loading mechanism

Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

Method of removing silicon oxide film

A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.

Film formation device

Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating film including the pattern by ALD using a carbon source gas; selectively removing the carbon-based protective film on an upper surface of the insulating film and on the bottom of the pattern by an anisotropic plasma processing; removing the silicon-containing oxide film formed on the bottom of the pattern by etching; and removing a remaining portion of the carbon-based protective film.

Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming system

A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiClgas as a Ti source and a Hgas as a reducing gas and by generating plasma in the chamber, includes introducing an Ar gas as a plasma generation gas into the chamber, converting the Ar gas into plasma to generate Ar ions, and acting the Ar ions on the Ti film to promote desorption of Cl from the Ti film.

Method of forming Ti film

A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a Ti source gas, a reducing gas and an Si source gas into the chamber, and converting the Ti source gas, the reducing gas and the Si source gas into plasma to form a TiSifilm on the substrate. A portion of the TiSifilm in a bottom of the contact hole corresponds to the contact layer.

Method of forming contact layer

A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (A) on which a wafer (W) is placed has a plurality of areas (Aa,Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (Aa) embedded in one area (Aa) of adjacent areas has a part (Aa) extending in the other area (Ab) of the adjacent areas, and the heater (Ab) embedded in the other area (Ab) of the adjacent areas has a part (Ab) extending in the one area (Aa).

Processing apparatus and heater unit

A treatment gas is supplied to form a Ti-based film on a predetermined number of wafers W while setting a temperature of a susceptorin a chamberto a predetermined temperature. After this, the interior of the chambercontaining no wafers W is cleaned by discharging Clgas as a cleaning gas from a shower headinto the chamber. During this cleaning, the temperature of each of the susceptor, the shower head, and the wall portion of the chamberis independently controlled so that the temperature of the susceptoris not lower than the decomposition start temperature of Clgas and the temperature of the shower headand the wall portion of the chamberis not higher than the decomposition start temperature.

Film formation method, cleaning method and film formation apparatus

A semiconductor processing system includes a load lock chamber and first to third process chambers connected to an airtight transfer chamber. The second process chamber is disposed below the first process chamber and overlaps with the first process chamber. The third process chamber is disposed at a position laterally distant from the first process chamber and leveled with the first process chamber. First to third exhaust ports are formed in the bottoms of the first to third process chambers, and connected to respective vacuum exhaust sections through first to third exhaust lines. A transfer mechanism is disposed in the transfer chamber to transfer a target substrate to and from the load lock chamber and the first to third process chambers.

Semiconductor processing system

The present invention provides an apparatus and method for forming a film by loading an object to be processed into a process chamber, moving up supporting pins to receive the susceptor, heating the object to be processed with heat radiation for a predetermined time by means of a heater housed in the susceptor while the supporting pins is being moved up, mounting the object to be processed on the susceptor, introducing arbitrarily chosen gases to adjust an inner pressure and temperature in accordance with the film formation conditions, and introducing a raw material gas into the process chamber, thereby starting film formation. After completion of the film-formation, only the supply of the raw material gas is stopped, whereas supply of other gases is gradually stopped. When the object to be processed is unloaded from the process chamber after completion of the film formation process, first, supporting pins are moved up to move the object to be processed away from the heater housed in the susceptor. The object to be processed is cooled in this manner. By virtue of a series of operations, a rapid change temperature and, a rapid change in pressure applied to the object to be processed is avoided, resulting in preventing a rapid temperature change.

CVD film formation method

There is provided a method of forming a structure connecting a first conductive layer and a second conductive layer in a semiconductor device comprising the steps of forming an insulating film on the first conductive layer, forming a hole in the insulating layer in which a surface of the first conductive layer is partially exposed, forming a titanium layer on a surface of the first conductive layer exposed at least in the hole, nitriding a surface of the titanium layer, oxidizing an un-nitrided part of the surface of the titanium layer, forming a titanium nitride layer on the titanium layer, and forming the second conductive layer on the titanium nitride layer.

Method of forming multilayered film

An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow rate of the low vapor pressure liquid material is controlled by a flow rate control unit, and the flow rate of the low vapor pressure liquid is supplied to an evaporator and evaporated into vapor there; and the vapor is fed to the deposition chamber through a vapor feed passage provided with heating means for preventing the vapor from re-liquefying, whereby the liquid material for deposition is supplied stably and accurately.

Liquid material supply apparatus and method

A method for forming a CVD film, comprising the steps of loading at least one object to be processed into a processing chamber and positioning the object on a support base in the processing chamber, after positioning the object in the processing chamber, introducing a process gas from a corresponding gas supply source via a corresponding gas introducing pipe into the processing chamber and forming a film by a chemical vapor deposition method on the object in the processing chamber, after forming the film on the object, unloading the object from the processing chamber, after unloading the object from the processing chamber, dry-cleaning an inside of the processing chamber, and after dry-cleaning the inside of the processing chamber, introducing an inert gas via a corresponding gas introducing pipe into the chamber to purge those particles deposited as a residue in the gas introducing pipe and inside of the chamber.

Growing community of inventors

Nirasaki, Japan

Seishi Murakami