Hosiden Corporation

Osaka Prefecture

Seisaku Hirai

Keiji Mine

Yoshiaki Ohbayashi

Tomoyuki Tanaka

Katsutoshi Izumi

Motoi Nakao

Fumihiko Jobe

Naoya Takehara

There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitrideis grown is locally present on a silicon substrateby forming silicon carbideon the silicon substrateto locally form the monocrystalline gallium nitrideon the above-mentioned silicon carbide. Silicon nitrideis used as a mask in forming the above-mentioned monocrystalline gallium nitride

Manufacturing method of monocrystalline gallium nitride localized substrate

A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substratewhich has a surface silicon layerof a predetermined thickness and a buried insulatorin a heating furnaceand of increasing the temperature of the atmosphere within heating furnacewhile supplying a mixed gas (G+G) of a hydrogen gas Gand of a hydrocarbon gas Ginto heating furnacethereby, of metamorphosing surface silicon layerof SOI substrateinto a single crystal silicon carbide thin film

Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate

A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substrate, which has a surface silicon layerof a predetermined thickness and a buried insulator, in a heating furnaceand of increasing the temperature of the atmosphere within heating furnacewhile supplying a mixed gas (G+G) of a hydrogen gas Gand of a hydrocarbon gas Ginto heating furnace, thereby, of metamorphosing surface silicon layerof SOI substrateinto a single crystal silicon carbide thin film

Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate

Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

Manufacturing device for buried insulating layer type single crystal silicon carbide substrate

Method for manufacturing buried insulating layer type single crystal silicon carbide substrate

A crush type pressure detecting device less in occurrence of malfunction, simple in structure, and inexpensive to manufacture is presented. On a crush plate made of ceramics or the like, a conductor path is formed, for example, in linear or U-shape, and electrodes are provided at both ends. Both ends of the crush plate are inserted into a holder made of plastic or printed board so as to support at both sides. An opening is provided in the holder to expose the electrode , thereby obtaining a crush type pressure detecting device of the invention. Terminal plates are connected to the electrodes of this detecting device , and the terminal plates are used as mounting members, and are disposed in contact with the object to be detected, for example, the outer wall of a housing of a rechargeable battery . One terminal plate is connected to the current collector in the housing , and other terminal plate is left over outside the housing as an output electrode , and the rechargeable battery having the crush type pressure detecting device according to the invention is obtained.

Crush type pressure detecting device, rechargeable battery with pressure detecting device, and portable electronic device

Explosion of rechargeable battery can be prevented in a relatively simple structure, at low cost, and without allowing spouting of electrolyte. A rechargeable battery D using a pressure-crush type protective device comprises a housing H including an internal electrode plate spirally wound about a positive electrode and a negative electrode through a separator, a jacket for accommodating this internal electrode plate and a sealing body for closing the opening of this jacket a positive electrode (or negative electrode) output electrode connected electrically to the internal electrode plate a spacer disposed beneath the sealing body for insulating between the sealing body and internal electrode plate a pressure-crush type protective device A disposed in said spacer as a pressure-sensitive element for detecting the internal pressure in the housing H, and an output terminal connected electrically to one terminal of this pressure-crush type protective device A (one end of a conductor layer A ) for picking up the detection result of the internal pressure detected by the pressure-crush type protective device A electrically to outside, in which other terminal of the pressure-crush type protective device A (other end of the conductor A ) is connected electrically to the positive electrode (or negative electrode) output electrode

Growing community of inventors

Yao, Japan

Seisaku Hirai