Hitachi, Ltd.

Renesas Technology Corp.

Akita Electronics Systems Co., Ltd.

Seikou Ono

Hitoshi Akamine

Tetsuaki Adachi

Masashi Maruyama

A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.

Electronic component for amplifying high frequency power and radio communication system

The present invention provides a high frequency power amplification circuit capable of preventing an output power and current consumption from being largely changed even when a load fluctuates in a wireless communication system for detecting an output level necessary for feedback control by a current detecting method. In a high frequency power amplification circuit as a component of a wireless communication system which detects an output level necessary for feedback control by a current detecting method, a capacitive element is interposed between the drain terminal of a power amplification transistor in the final stage and the gate terminal of a transistor constructing a current mirror circuit in a circuit for detecting an output level, and a change in an output power accompanying load fluctuation is reflected in a detection current of the output level detecting circuit.

Growing community of inventors

Komoro, Japan

Seikou Ono