Samsung Electronics Co., Ltd.

Seijin Kim

Chul-Ho Lee

Soon-Young Kim

Sunghwan Yun

In-Soon Kim

Huikwon Seo

A semiconductor device and electronic device comprising the same includes at least one dummy chip having at least one Through Silicon Via (TSV), and at least one active chip connected to the at least one dummy chip. The at least one active chip exchanges an electrical signal through the at least one TSV. The at least one active chip may be a memory chip and a non-memory chip in a vertically stacked (3D) configuration, connected through an electrical path that includes the TSV of the dummy chip. Embodiments may include multiple memory chips and dummy chips.

Electronic device

An electronic device includes: a communication module; an input module; a display; an interface; at least one sensor; a memory; and a processor module. The processor module includes at least one of: at least one dummy chip including at least one Through Silicon Via (TSV); at least one memory bridge including at least one TSV; at least one memory connected to the at least one dummy chip and the at least one memory bridge and that can exchange an electric signal through the at least one dummy chip and the at least one memory bridge; or at least one processor. The at least one processor may be configured to exchange an electric signal through the at least one memory bridge, and to transmit an electric signal to at least one of the communication module, input module, display, interface, at least one sensor, or first memory. The at least one processor may exchange information via a circuit path that includes at least one of the memory bridge and a portion of the at least one memory, when transmitting the electric signal.

A method of managing a memory by an electronic device is provided. The method includes configuring a swap data amount per unit time, identifying an actual use amount of swap data, and comparing the identified actual use amount of the swap data with the configured swap data amount per unit time.

Electronic device and method of managing memory of electronic device

An operating method for a memory system provides a ready/busy signal from a nonvolatile memory device indicating an idle state or a busy state to a controller. The controller generates a next command but transfers the next command to the nonvolatile memory device in response to the ready/busy signal and the idle verse busy state of a target plane among multiple planes of the nonvolatile memory device.

Nonvolatile memory device, memory system and controller operating method

A memory system comprises a nonvolatile memory and a phase change memory. The memory system can be operated by reading operation information of the nonvolatile memory from the phase change memory, adjusting voltage parameters of the nonvolatile memory based on the read operation information, and performing an operation of the nonvolatile memory based on the adjusted voltage parameters.

Memory system and related method of operation

A nonvolatile memory device includes a memory cell array having multiple memory cells, a data input/output buffer for temporarily storing data to be stored in the memory cells, and a data scanner for scanning the data stored temporarily in the data input/output buffer. The nonvolatile memory device further includes control logic for reading address information of a memory cell in which at least a portion of the data is to be stored and selectively performing a data scan operation according to the read address information.

Growing community of inventors

Seongnam-si, South Korea

Seijin Kim