Hitachi, Ltd.

Seiji Watahiki

Takaaki Suzuki

Toshihide Nabatame

Tadahiko Miyoshi

Mitsuo Hayashibara

Masaru Kadoshima

Yoshiyuki Yasutomi

Masahisa Sobue

Junji Sakai

Akio Chiba

Tetsuo Fujiwara

Yasuhiko Murata

In a semiconductor device and production method thereof, a technique is used to prevent film separation of the bottom electrode occurring during a heat treatment process which is carried out to make the bottom electrode closely packed and in the heat treatment process for producing dielectric crystallization. In the production method, a glue layer including an insulator is formed between SiO insulation layer and the inner wall of a concave hole. The SiO layer is located on the Si board , and Si plug and a barrier layer are formed therein. A glue layer is formed on the inner wall of the hole of the SiO insulation layer , and a bottom electrode comprising Ru is formed on the barrier layer and glue layer . Dielectric film comprising BST and a top electrode comprising Ru are laminated sequentially on the bottom electrode , to form a dielectric device with the bottom electrode

Semiconductor device and production method thereof

The present invention is a composite ceramic structure having a porosity of 5 to 40% by volume comprising particles selected from the group consisting of grains and whiskers of at least one inorganic compound AB, where B is oxygen, nitrogen or carbon and A is any metal so the difference in electronegativity between A and B is less than 1.7; or particles selected from the group consisting of grains and whiskers of an inorganic compound, where there is a difference of 1.7 and higher between the components, and having layers of the inorganic compound AB formed on the surfaces of the particles. The particles are bonded together by silicon nitride particles having an average particle size of less than 0.2 micron. The composite ceramic structure is produced by sintering a shape composed of particles of AB or composed of particles having layers of AB formed on the surfaces of the particles in a gaseous atmosphere containing silicon and nitrogen to grow silicon nitride particles on the surfaces of the shaped inorganic particles.

High strength composite ceramic structure and process for producing the

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Hitachinaka, Japan

Seiji Watahiki