Fujitsu Corporation

Fujitsu Semiconductor Limited

Socionext Inc.

Seiji Ueno

Makoto Iijima

Muneharu Morioka

Osamu Igawa

Masaru Nukiwa

Hideo Kubo

Tsuyoshi So

Takumi Ihara

Joji Fujimori

Yasunori Fujimoto

Masayuki Kato

Daisuke Mizutani

Aiichiro Inoue

Iwao Yamazaki

Masateru Koide

Hideo Yamashita

Kazuyuki Imamura

Takeyasu Saito

A semiconductor device includes: a substrate; a semiconductor element installed on the substrate so that a surface formed with an electrode is directed to the substrate; a chip capacitor installed on the substrate; and a conductive material covering a rear surface opposite to the surface of the semiconductor element and joining to one terminal electrode of the chip capacitor.

Manufacturing method of semiconductor device

Semiconductor device and manufacturing method of semiconductor device

A multi-chip module includes: a board; a wiring board disposed on the board and including a wiring pattern; and a plurality of chips disposed on the wiring board. Each of the plurality of chips is connected with at least one of the other chips, and the plurality of chips and the board are electrically connected with each other via a portion other than the wiring pattern of the wiring board.

Multi-chip module

A semiconductor component includes a semiconductor element that has a plurality of signals, a wiring board that is disposed below the semiconductor element and that draws the plurality of signals of the semiconductor element, a heat conduction member that dissipates heat generated by the semiconductor element, a joining member that is disposed between the semiconductor element and the heat conduction member and that joins the heat conduction member to the semiconductor element, a support member formed with an opening so as to surround the semiconductor element that supports the heat conduction member, a first adhesive member that is disposed between the support member and the wiring board to bond the support member with the wiring board and a second adhesive member that is disposed between the support member and the heat conduction member to bond the support member with the heat conduction member.

Semiconductor component having adhesive squeeze-out prevention configuration and method of manufacturing the same

A semiconductor device includes a board, a semiconductor element mounted on one of main surfaces of the board, a plurality of passive elements provided in the vicinity of the semiconductor element, and a heat radiation plate mounted above the board and connected to a rear surface of the semiconductor element via a heat conductive material. A surface roughness of a surface of the heat radiation plate which surface comes in contact with the heat conductive material is non-uniform at a whole of the surface.

Semiconductor device

There are provided a first insulating film formed over a semiconductor substrate, actual operating capacitors formed on the first insulating film in a memory cell region vertically and horizontally, dummy capacitors formed selectively at four corners of the memory cell region, and a second insulating film formed on the actual operating capacitors and the dummy capacitors.

A method for manufacturing a substrate, including adhering an adhesive layer to an organic insulation substrate to form a first part; forming a via hole in the first part such that the via hole penetrates the first part; forming a conductive metal film so that the conductive metal film covers the via-hole on one side of the first part; using an electrolytic plating process, where the conductive metal Film is used as an electrode, to form a metal via member within the via hole and to form an inter-layer wire; and removing an entirety of the conductive metal film without removing the inter-layer formed by the electrolytic plating process; repeating steps (a)-(e) for a second part; and thereafter attaching the first part to the second part.

Method of forming an insulative substrate having conductive filled vias

A semiconductor device includes a semiconductor element on which a plurality of bumps are formed and a substrate having a first surface on which a plurality of protruding electrodes are protrudingly formed in correspondence to an arrangement of the bumps, and a second surface on which balls serving as mounting terminals are formed. The semiconductor element is bonded in a face-down manner to the substrate with the protruding electrodes being embedded into the bumps. Alloy layers having materials identical to those of the bumps and the protruding electrodes are formed on interfaces of the bumps and the protruding electrodes.

Semiconductor device and method of producing the same

A semiconductor device includes a multi-flexible substrate and semiconductor chips mounted thereon. The multi-flexible substrate is configured such that organic insulation substrate layers and filmy adhesive layers are alternatively stacked together and wiring layers formed therein are interconnected by means of vias. Each of the vias consisting of a via-hole which is formed penetrating both the organic insulation substrate layers and the filmy adhesive layers and a metal via member which is provided in the via-hole and made of an identical material. A method of manufacturing the multi-flexible substrate for the semiconductor device is also disclosed.

Growing community of inventors

Kawasaki, Japan

Seiji Ueno