Tokuyama Corporation

Screen Holdings Co., Ltd.

Seiji Tono

Yoshiki Seike

Kenji Kobayashi

Sei Negoro

Takayuki Negishi

Takafumi Shimoda

Yuki Kikkawa

Toshiaki Otani

Manami Oshio

Ichiro Mikami

Shunkichi Omae

Yasutaka Natsuka

Yuki Chikashige

Mizuki Suto

Tohru Nonaka

A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): RRRRN·OH(In formula (1), R, R, Rand Rmay be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): RRRRN·X(In formula (2), R, R, Rand Rmay be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF, a fluorine atom, a chlorine atom or a bromine atom.)

Silicon etching liquid, and method for producing silicon device and method for processing silicon substrate, each using said etching liquid

A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1):RO—(CHO)—R  (1)wherein Ris a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, Ris a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

Silicon etching solution and method for producing silicon device using the etching solution

A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

Quaternary alkylammonium hypochlorite solution, method for manufacturing same, and method for cleaning semiconductor wafer

A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1):RO&#x2014;(CHO)&#x2014;R&#x2003;&#x2003;(1)wherein Ris a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, Ris a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25&#xb0; C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

Treatment liquid for semiconductor wafers, which contains hypochlorite ions

A photoresist developer including a basic aqueous solution containing 0.5&#x2dc;10 mass % of a particular nonionic surfactant and 0.01-10 mass % of particular ammonium compound, the photoresist developer makes it possible to form a favorable resist pattern with out causing scum even when developing thick photoresists.

Photoresist developer and method for fabricating substrate by using the developer thereof

There are provided a method of forming a resist pattern, comprising the steps of forming a resist film containing a specific calixarene derivative on a substrate; forming a pattern latent image by selectively exposing the resist film to a high-energy beam; and developing the latent image by removing parts not exposed to the high-energy beam of the resist film with a developer containing at least one fluorine-containing solvent selected form the group consisting of a fluorine-containing alkyl ether and a fluorine-containing alcohol, and the fluorine-containing solvent as a resist developer.

Resist pattern forming method and developer

A solution for washing away residue, comprising an aqueous solution of a water-soluble high molecular compound in which is dissolved at least one kind of dissolving agent selected from an amine and a fluoride. The washing solution is capable of effectively washing away the residue formed during the production of electronic circuits, is very lowly corrosive to the insulating films, low-dielectric interlayer insulating films and wirings, and offers an advantage of little generating foam.

Growing community of inventors

Yamaguchi, Japan

Seiji Tono