Mitsubishi Denki Kabushiki Kaisha

Seiji Takemura

Yoshiharu Takahashi

Masataka Kawai

Tetsuya Ueda

Yasuo Tada

Katsunori Ochi

Syojiro Kodai

Junko Itoh

Keitaro Tsukui

Sakae Kiguchi

Yuuji Kishimoto

Tuguo Kurisu

Eitaro Nagai

Kazunari Michii

Hiroshi Otani

Haruo Shimamoto

Yasuhiro Teraoka

Kou Shimomura

Osamu Nakagawa

Tetsuya Hirose

Takaaki Okidono

Tomomi Hamada

Osami Nakagawa

A method of producing a thin IC card having a built-in battery includes forming a through-hole including an edge in a circuit board having obverse and reverse main surfaces, a circuit pattern being present on a first of the main surfaces of the circuit board; mounting a functional part on the first of the main surfaces of the circuit board; molding said circuit board and said functional part in a resin with a second main surface of said circuit exposed and forming a battery lodging section in the resin molding defined by the through-hole; and mounting a battery in said battery lodging section and electrically connecting the circuit pattern to the battery.

Method of making IC card

A thin IC card includes a circuit board on which functional parts are mounted and a through-hole defining an edge of a battery lodging section in which a battery is disposed, the circuit board being embedded in a molding-resin section with the reverse surface of the board exposed. The battery lodging section is aligned with the through-hole of the circuit board. Electrical connections between the circuit board and the battery are effected in a recess or cutouts in the circuit board. The battery is embedded in the lodging section using an expandable resin to make the card surface flat.

Thin IC card

In a semiconductor pressure sensor, a dam which prevents a sheathing resin from flowing into a diaphragm portion during the molding of the sheathing resin is disposed on the outer periphery of piezoresistors and the diaphragm portion on the surface of a semiconductor pressure sensor chip. The volume of the base and that of the semiconductor pressure sensor chip are adjusted so that a tensile force exerted upon the semiconductor pressure sensor chip by the base cancels a compressive force exerted upon the semiconductor pressure sensor by the sheathing resin when the temperature of the semiconductor pressure sensor returns to an ordinary room temperature from a high temperature. As a result, strain is not caused in the semiconductor pressure sensor chip, and therefore measurements of pressure with a high degree of accuracy can be performed.

Semiconductor pressure sensor for use at high temperature and pressure

A semiconductor element such as an encapsulated or non-encapsulated semiconductor chip having a multitude of terminals is mounted on one surface of a quadrate substrate. A multitude of connector pins extend from the other surface of the substrate. A plurality of connector lands are formed on a surface of the substrate and electrically connected to the corresponding terminals of the semiconductor element. The connector lands are electrically connected to the connector pins through wiring. The connector pins have a pitch that is larger near the connector lands than at locations farther away from the lands. The pitch between adjacent connector pins is made larger as necessary or desired so as to allow the passage of an increased number of connecting wires between the adjacent connector pins, thus ensuring high density wiring with improved efficiency.

Packaged semiconductor device

A quadrate semiconductor element in the form of a quad flat package, a bare chip, and the like mounted on a substrate has a plurality of first terminals electrically connected through connecting wires to corresponding second terminals which are disposed on the substrate around the semiconductor element. The second terminals are disposed on the substrate such that the number of second terminals per unit area is less at locations near the corners of the quadrate semiconductor element than at the other portions of the substrate. This arrangement enlarges the effective wiring area for the connecting wires at the corners, thus greatly improving wiring efficiency.

Semiconductor package

A semiconductor pressure sensor device that improve the measuring accuracy without providing a silicon base in attaching a semiconductor pressure sensor chip to a lead frame, and a method of manufacturing thereof is disclosed. The semiconductor pressure sensor device includes a die-bond adhesive 10 formed of a resilient material for fixing a semiconductor pressure sensor chip 50 to a lead frame 100, a wire bond receiving projection 4 provided in the diepad where the semiconductor pressure sensor chip 50 is attached for receiving pressure application force from the bottom of the semiconductor pressure sensor chip 50 at the time of wire bonding, and a supporting projection 11 for preventing distortion stress by the wire bond receiving projection 4 from being transmitted. Thermal distortion of the semiconductor pressure sensor chip 50 and the lead frame 100 is absorbed by die-bond adhesive 10. By wire bond receiving projection 4 and supporting projection 11, stress acting on the semiconductor pressure sensor chip 50 is decreased to improve the measuring accuracy.

Method of manufacturing semiconductor pressure sensor device with two

A carrier tape includes an insulating film supporting a plurality of leads. The film has a center device hole for receiving a semiconductor chip therein, a plurality of outer lead holes formed at the periphery of the center device hole, a lead supporting portion positioned between the center device hole and the outer lead holes, and a link portion positioned between a pair of adjacent outer lead holes and connected to the lead supporting portion for directing the flow of molten resin during encapsulation of the semiconductor chip. The link portion includes an opening or recess. The plurality of leads of the carrier tape are supported on the lead supporting of the film, with one end portion of each lead projecting into the center device hole of the film. During manufacture, a semiconductor chip having a plurality of electrodes is positioned within the center device hole, and the leads are electrically connected to respective electrodes of the semiconductor chip. The resultant chip is placed within a cavity of a mold, and a molten resin is injected into the cavity through the opening or recess passage formed in the link portion of the film.

Carrier tape

A liquid sealed semiconductor device comprises a base, semiconductor elements which are mounted to the base, a leading pin passing through the base and protruding to the outside of a package, a cap which is jointed to the base and covers the semiconductor elements, liquid filling the package, a sponge provided within the package and an internal cap for fastening the sponge to the inner wall of the package. The sponge absorbs the pressure change due to the expansion or the contraction of the internal liquid so as to prevent the liquid from leaking out of the package and to protect the package from being deformed. Furthermore, the internal cap eliminates the possibility that the sponge would drop down.

Liquid sealed semiconductor device and method of assembling the same

A manufacturing method for a semiconductor device in which an electrode of a semiconductor chip is electrically connected to an inner lead of a carrier tape. The electrodes of the semiconductor chip are brought into contact with the inner lead of the carrier tape. Bonding is performed with inner lead droop controlled to no more than 80 .mu.m.

Manufacturing method for semiconductor device

A semiconductor acceleration sensor and a method of producing the sensor are characterized in that a pedestal on which a semiconductor acceleration sensor chip including a weight is mounted is integral with a stopper for preventing movement of the weight outside a prescribed range. The semiconductor acceleration sensor is not broken even if an acceleration outside the measurement range is applied. In addition, the semiconductor acceleration sensor exhibits high accuracy and is low in cost.

Semiconductor acceleration sensor

A semiconductor pressure sensor device that can improve the measuring accuracy without providing a silicon base in attaching a semiconductor pressure sensor chip to a lead frame, and a method of manufacturing thereof is disclosed. The semiconductor pressure sensor device includes a die-bond adhesive 10 formed of a resilient material for fixing a semiconductor pressure sensor chip 50 to a lead frame 100, a wire bond receiving projection 4 provided in the diepad where the semiconductor pressure sensor chip 50 is attached for receiving pressure application force from the bottom of the semiconductor pressure sensor chip 50 at the time of wire bonding, and a supporting projection 11 for preventing distortion stress by the wire bond receiving projection 4 from being transmitted. Thermal distortion of the semiconductor pressure sensor chip 50 and the lead frame 100 is absorbed by die-bond adhesive 10. By wire bond receiving projection 4 and supporting projection 11, stress acting on the semiconductor pressure sensor chip 50 is decreased to improve the measuring accuracy.

Growing community of inventors

Itami, Japan

Seiji Takemura