Ebara Corporation

Tohoku University

Sony Corporation

Oki Semiconductor Co., Ltd.

Other

Lapis Semiconductor Co., Ltd.

Tohoku Techno Arch Co., Ltd.

Tokyo Electron Limited

Sumitomo Electric Industries, Limited

Semiconductor Technology Academic Research Center

Mizuho Information & Research Institute, Inc.

Samukawa, Seiji

Seiji Samukawa

Hirokuni Hiyama

Katsunori Ichiki

Kazuo Yamauchi

Tomohiko Tatsumi

Tetsuya Tatsumi

Toshiaki Shiraiwa

Akira Fukuda

Shinji Kawada

Akio Shibata

Noriaki Matsunaga

Kohei Ono

Ikuo Kurachi

Mitsuru Okigawa

Masaki Yoshimaru

Jun Hashimoto

Seiichi Fukuda

Xun Gu

Kenta Sugawara

Hisashi Yano

Takuya Iwasaki

Kunitoshi Tajima

Youichi Yatagai

Tadashi Shinmura

Shigeo Yasuhara

Daisuke Ohori

Shingo Kadomura

Tsutomu Shimayama

Toshihisa c/o Tokyo Electron At Limited Nozawa

A method of manufacturing a semiconductor device including a substrate; a first nitride layer containing gallium on the substrate; and a second nitride layer containing silicon on the first nitride layer includes generating an etchant of a gas containing chlorine atoms or bromine atoms; and selectively removing the second nitride layer, wherein the etchant is generated by plasma discharge of the gas, wherein the second nitride layer and the first nitride layer are prevented from being irradiated with ultraviolet rays generated at a time of the plasma discharge, and wherein the selectively removing the second nitride layer includes etching the second nitride layer under a first atmosphere at a first pressure that is lower than a first saturated vapor pressure of a silicon compound and that is higher than a second saturated vapor pressure of a gallium compound.

Method of manufacturing semiconductor device

A system, a method, and a program for predicting a processing shape formed by a plasma process, including databases for apparatus condition, incident ion, incident radical, actual measurement, material property and surface reaction, as well as a trajectory calculation unit, and a surface shape calculation unit. The trajectory calculation unit calculates the trajectories of the respective ions incident on the surface of the substrate based on information and data obtained from the databases and from measurement data from an on-wafer monitoring sensor. Based on the calculation result by the trajectory calculation unit, the surface shape calculation unit calculates the change of the shape by referring to the data stored in the material property and surface reaction DB.

System, method, and program for predicting processing shape by plasma process

A plasma monitoring method using a sensor, the sensor having a substrate; a first electrode, the first electrode being a conductive electrode and formed on the substrate while being isolated from the substrate; an insulating film formed on the first electrode; a contact hole formed in the insulating film and having a depth from a surface of the insulating film to the first electrode; and a second electrode, the second electrode being a conductive electrode, formed on the surface of the insulating film, and faced to plasma during a plasma process, the plasma monitoring method including measuring and monitoring potentials of the first electrode and the second electrode or a potential difference between the first electrode and the second electrode during the plasma process is disclosed. A plasma monitoring system carrying out the plasma monitoring method is also disclosed.

Plasma monitoring method and plasma monitoring system

Provided is a method of etching a transition metal-containing film using a substrate processing apparatus. The substrate processing apparatus includes: a processing container configured to define a processing chamber and a plasma generation chamber; and a shielding unit provided between the processing chamber and the plasma generation chamber and formed with a plurality of openings to communicate the processing chamber and the plasma generation chamber with each other. The shielding unit has a shielding property against ultraviolet rays. The method includes: supplying neutral particles of oxygen atoms to the processing chamber in which a workpiece is accommodated by generating plasma of a first gas containing oxygen in the plasma generation chamber; supplying a second gas to complex a transition metal oxidized while supplying the neutral particles of oxygen to the processing chamber; and supplying neutral particles of rare gas atoms to the processing chamber by generating plasma of a rare gas.

Method for etching film having transition metal

Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH) is 66% or more.

Low dielectric constant insulating film and method for forming the same

A plasma monitoring method measures in-situ a resistance of and a current flowing in a side wall. A monitoring system has two sensors in a plasma chamber, each having upper and lower electrodes. An external resistance element is connected only to one of the two sensors, in parallel to the wires extending from the upper and lower electrodes of the sensor concerned. Consequently, a resistance between the upper and lower electrodes is different in the two sensors, and two different values of potential difference between the upper and lower electrodes are obtained in-situ. Because a resistance value of the external resistance element is known, a resistance value of a side wall of a contact hole per one contact hole is obtained in-situ, and consequently an electric current flowing in the side wall of the contact hole per one contact hole can be obtained.

Plasma monitoring method

A method of measuring a resistivity of a sidewall of a contact hole formed in a semiconductor device, wherein said semiconductor device includes a first electrode formed on a substrate; a second electrode formed on the first electrode with an insulating film in between; a resist pattern formed on the first electrode and the second electrode; a contact hole formed in the first electrode and the second electrode; and an organic film deposited on the sidewall of the contact hole, includes the steps of: placing a probe needle on the first electrode and the second electrode so that the probe needle contacts with the first electrode and the second electrode several times; establishing electrical conductivity of the probe needle relative to the first electrode and the second electrode; and measuring the resistivity of the organic film between the first electrode and the second electrode.

Method of measuring resistivity of sidewall of contact hole

Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.

Dry etching method and production method of magnetic memory device

An ultraviolet light monitoring system includes first and second electrodes, an evaluation subject film and a power source. The first and second electrodes are opposingly disposed and attract holes which are generated in accordance with irradiation of ultraviolet light. The evaluation subject film is formed in a vicinity of the first and second electrodes, and is a subject of evaluation of damage caused by the irradiation of ultraviolet light. The power source, at times of monitoring of the ultraviolet light, applies a predetermined bias to a series path formed by the first electrode, a gap between the first and second electrodes, and the second electrode.

Ultraviolet light monitoring system

An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power source unit for supplying power to them. The on-wafer data I/O unit is connected to a laser diode (LD) and a photo diode (PD) which are optical I/O units installed outside. The data I/O unit receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer, a VUV photon detector, and a radical ion species emission spectrophotometer.

On-wafer monitoring system

An etching apparatus comprises a workpiece holder () for holding a workpiece (X), a plasma generator () for generating a plasma () in a vacuum chamber (), an orifice electrode () disposed between the workpiece holder () and the plasma generator (), and a grid electrode () disposed upstream of the orifice electrode () in the vacuum chamber (). The orifice electrode () has orifices () defined therein. The etching apparatus further comprises a voltage applying unit () for applying a voltage between the orifice electrode () and the grid electrode () to accelerate ions from the plasma () generated by the plasma generator () and to pass the extracted ions through the orifices () in the orifice electrode (), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.

Etching method and apparatus

A real-time monitoring apparatus for a plasma process comprises a plurality of measuring units () mounted on a semiconductor wafer, a receiving device () for receiving a signal transmitted from each of the measuring units (), and a data processing apparatus () for detecting a condition of the semiconductor wafer () based on the received signal. In this apparatus, each of the measuring units () includes at least one plasma process detection sensor (), a light-emitting device () for converting an output of the plasma process detection sensor into an optical output, and a power supply () for supplying drive power to the light-emitting device ().

Real-time monitoring apparatus for plasma process

An etching apparatus comprises a workpiece holder () for holding a workpiece (X), a plasma generator () for generating a plasma () in a vacuum chamber (), an orifice electrode () disposed between the workpiece holder () and the plasma generator (), and a grid electrode () disposed upstream of the orifice electrode () in the vacuum chamber (). The orifice electrode () has orifices () defined therein. The etching apparatus further comprises a voltage applying unit () for applying a voltage between the orifice electrode () and the grid electrode () to accelerate ions from the plasma () generated by the plasma generator () and to pass the extracted ions through the orifices () in the orifice electrode (). A first collimated neutral particle beam is generated and applied to the workpiece (X) for etching a surface of a processing layer () of the workpiece (X). A second collimated neutral particle beam is generated, and a mask () for covering at least a portion of the surface of the processing layer () is sputtered by the second neutral particle beam to form a protecting film () on a sidewall () of the processing layer () for protecting the sidewall () of the processing layer () from being etched by the first neutral particle beam.

Growing community of inventors

Miyagi, Japan

Seiji Samukawa