National Institutes for Quantum Science and Technology

Tohoku University

Seiji Sakai

Shunsuke Fukami

Shigemi Mizukami

Yoshiro Hirayama

Songtian Li

Satoshi Iihama

Junsaku Nitta

A layered structure which achieves both high spin polarization and low electrical resistance is provided. The layered structure includes a Heusler alloy, and graphene that is in direct contact with the surface of the Heusler alloy. Such a layered structure is fabricated by forming a thin film of the Heusler alloy over a substrate under vacuum, and growing graphene on the surface of the thin film of the Heusler alloy while maintaining the vacuum.

Layered structure, magnetoresistive device using the same, and method of fabricating layered structure

A magneto-optical memory interface includes: a memory cell structure having multiple allocated magnetic recording cells, a selection means configured to select an individual or a predetermined number of the multiple allocated magnetic recording cells of the memory structure, and configured for an electronic signal to be applicable thereto; and a light irradiation part configured to irradiate the predetermined number of the multiple allocated magnetic memory cells with an optical signal, wherein each of the magnetic recording cells is a magnetic recording cell whose sensitivity to changes in a magnetization state thereof increases in response to an irradiation light from the light irradiation part, and each of the magnetic recording cells is a magnetic recording cell whose magnetization state changes in response to an applied electrical signal resulting from selection by the selection means and the irradiation light from the light irradiation part.

Magneto-optical memory interface

Growing community of inventors

Chiba, Japan

Seiji Sakai