Sony Corporation

Seiji Onoe

Eiji Nakashio

Junichi Sugawara

Toru Katakura

Susumu Sato

Yutaka Soda

Yoshimi Takahashi

Hiroshi Kano

Yoshito Ikeda

Teruo Inaguma

Seiichi Onodera

Takuji Matsuo

In a magnetic tunnel effect type magnetic headhaving a magnetic tunnel junction elementsandwiched with conductive gap layersandbetween a pair of magnetic shielding layersand, the conductive gap layersandare formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic headcan have an improved face opposite to a magnetic recording medium.

Magnetic tunnel effect type magnetic head, and recorder/player

A magnetic tunnel effect type magnetic head comprising a first soft magnetic conductive layer which is to provide a lower shielding layer, a metal oxide layerand a first nonmagnetic conductive layer, formed on the first soft magnetic conductive layer, to provide a lower gap layer, a magnetic tunnel junction layerformed on the first nonmagnetic conductive layer to provide a magnetic tunnel junction element, a second nonmagnetic conductive layer formed on the magnetic tunnel junction layerto provide an upper gap layer; and a second soft magnetic conductive layer formed on the second nonmagnetic conductive layer to provide an upper shielding layer, the metal oxide layerin the lower gap layerbeing formed beneath at least the magnetic tunnel junction layer

Magnetic tunnel effect type magnetic head, and method of producing same

Magnetic tunnel effect type magnetic head having a magnetic tunnel junction element, and recorder/player

A head substrate and a protective substrate are formed of an electrostatic-discharge resistant conductive material having an electrical resistivity of 10to 10&#x3a9;cm. These substrates are electrically connected to a base metal through the use of conductive paste and are set to a ground potential via the base metal and a rotating drum. This suppresses a discharge current flowing through an MR element when an electrostatically charged substance touches or approaches a magnetic reproducing head, a terminal, a conducting wire, etc. to generate an electrostatic discharge. The magnetic reproducing head including an MR element and the like is prevented against an electrostatic discharge damage. It is possible to provide the magnetic reproducing head, a head drum apparatus, and a magnetic recording-reproducing apparatus which can highly effectively prevent an electrostatic discharge damage.

Magnetic reproducing head having a structure to inhibit electrostatic discharge damage to a recording tape

Magnetic reproducing head having a structure to inhibit electrostatic discharge to a recording tape

In a magnetic tunnel effect type magnetic head () having a magnetic tunnel junction element () sandwiched with conductive gap layers () and () between a pair of magnetic shielding layers () and (), the conductive gap layers () and () are formed from at least one nonmagnetic metal layer containing a metal element selected from Ta, Ti, Cr, W, Mo, V, Nb and Zr. Therefore, the magnetic head () can have an improved face opposite to a magnetic recording medium.

Magnetic tunnel effect type magnetic head having a magnetic tunnel junction element sandwiched with conductive gap layers between a pair of magnetic shielding layers

A magnetic tunnel element ( ) including a plurality of ferromagnetic films ( ) laminated across an insulating film ( ) formed of metal oxide films ( ) and in which asymmetric tunnel barriers are formed along the direction in which the ferromagnetic films ( ) are laminated by this insulating film ( ) ( ). There are also constructed a thin-film magnetic head, a magnetic memory and a magnetic sensor, each of which includes the magnetic tunnel element ( ). Since a magnetoresistive ratio can be suppressed from being lowered by decreasing a bias voltage dependency, there are provided a highly-reliable magnetic tunnel element which can obtain a high output when the magnetic tunnel element is applied to a thin-film magnetic head and the like and a method of manufacturing such a magnetic tunnel element. When a magnetic head, a magnetic memory and a magnetic sensor include this magnetic tunnel element, they become highly reliable and also become able to obtain a high output.

Magnetic tunnel element and its manufacturing method, thin-film magnetic head, magnetic memory and magnetic sensor

A multichannel magnetic head utilizing the magnetoresistive effect comprises a plurality of magnetoresistive effect type reproducing magnetic head elements arrayed between a first and second magnetic shield and electrodes wherein the reproducing magnetic head elements are arrayed in parallel on at least the first magnetic shield and electrode. Electrodes on one side are constructed commonly by the first magnetic shield and led out as a single common terminal decreasing the number of terminals. Therefore, the number of the terminals in the multichannel magnetic head using the magnetoresistive effect can be decreased, the multichannel magnetic head can be miniaturized, the occurrence of a short-circuit between the terminals or between the leads can be removed, the occurrence of fluctuations of element characteristics can be removed, the multichannel magnetic head using the magnetoresistive effect can become highly reliable and a yield of the multichannel magnetic head using the magnetoresistive effect can be improved.

Multichannel magnetic head using magnetoresistive effect

The part of an MR element which lies close to a medium-facing surface overlaps that part of a flux-guiding element which lies remote from the medium-facing surface , with a second gap film interposed between the elements and Further, the MR element overlaps the flux-guiding element for a distance that falls within a range of 15 to 25% of the length of the MR height of the element as measured in a direction perpendicular to the medium-facing surface

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Miyagi, Japan

Seiji Onoe