Sony Corporation

Mitsubishi Denki Kabushiki Kaisha

Sanyo Electric Co., Ltd.

Renesas Electronics Corporation

Renesas Technology Corp.

National Institute of Advanced Industrial Science and Technology

Hitachi-Kokusai Electric Inc.

Ulvac, Inc.

Canon Anelva Corporation

Panasonic Corporation

Tokyo Electron Limited

Showa Denko K.k.

Fujitsu Semiconductor Limited

Kanto Denka Kogyo Co., Ltd.

Tokyo Eectron Limited

Seiji Okura

Mahito Sawada

Katsuo Sakai

Kenji Kameda

Hitoshi Murata

Koji Oda

Kaoru Abe

Akira Sekiya

Etsuo Wani

Masaji Sakamura

Yutaka Ohira

Yuki Mitsui

Hiroshi Tobimatsu

Taisuke Yonemura

Yuuki Kamiura

A CVD apparatus cleaning method that efficiently removes by-product such as SiOor SiNadhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

CVD apparatus and method of cleaning the CVD apparatus

An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiOor SiNstuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiFin a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiFto decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

Device for cleaning CVD device and method of cleaning CVD device

A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P&#x2014;SiO film, P&#x2014;SiON film, or PE-SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.

Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof

An interconnection is formed on a semiconductor substrate having a semiconductor element formed thereon. Next, a passivation film is formed on the semiconductor substrate including the interconnection. Further, a polyimide film, which is served as a buffer coating film, is formed on the passivation film. Further, the polyimide film is patterned. Next, the passivation film is subject to etching while the patterned polyimide film is taken as a mask. Next, a hardened layer, which is formed on the surface of the polyimide film as a result of etching, is removed through ashing process. Next, the semiconductor substrate after ashing process is cured so as to transform the polyimide film into imide.

Method of manufacturing semiconductor device having passivation film and buffer coating film

A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P&mdash;SiO film, P&mdash;SiON film, or PE&mdash;SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.

Growing community of inventors

Tokyo, Japan

Seiji Okura