Asm IP Holding B.v.

Asm IP Holdings B.v.

Seiji Okura

Viljami J Pore

Hidemi Suemori

Takafumi Hisamitsu

A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

Process for deposition of titanium oxynitride for use in integrated circuit fabrication

Examples of a oxide film forming method include providing a precursor to a reaction space including a substrate and a susceptor, and forming an oxide film on the substrate by introducing at least one of CxOy and NxOy (x and y are integers) as a reactant gas into the reaction space while applying a pulse RF power having a duty cycle less than 60% to an RF plate to generate plasma of the reactant gas, the RF plate being provided in the reaction space so as to face the susceptor, wherein the providing and the forming are repeated a predetermined number of times.

Oxide film forming method

Processes are provided for depositing titanium nanolaminate thin films that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. In some embodiments a titanium nanolaminate film comprising titanium oxide layers and titanium nitride layers is deposited on a three-dimensional feature, such as an existing mask feature. The conformal titanium nanolaminate film may be directionally etched so that only the titanium nanolaminate deposited or formed on the sidewalls of the existing three-dimensional feature remains. The three-dimensional feature is then removed via an etching process, leaving the pitch doubled titanium nanolaminate film.

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Sagamihara, Japan

Seiji Okura