Ulvac, Inc.

Nihon Shinku Gijutsu Kabushiki Kaisha

Ulvac Co., Ltd

Seiji Ogata

Tsutomu Nishihashi

Yuzo Sakurada

Hidekazu Yokoo

Kyuzo Nakamura

Takashi Hanamoto

Masaki Itou

Katsuhiko Itou

Masasumi Araki

Masayuki Sekiguchi

Takeshi Hisamune

Ryota Fukui

Nakaya Chida

A vacuum freeze-drying apparatus capable of rapid drying is provided. A cold trap for drying, which is arranged inside a drying chamber, is set to a low temperature of &#x2212;70 degrees Celsius or below, and heat is supplied to frozen particles on a conveyor belt to a degree such that the frozen particles do not melt. The amount of the liquid component evaporating from the frozen particles increases, and the amount of the liquid component entering the frozen particles decreases so that the time for drying the frozen particles is shortened.

Vacuum freeze-drying apparatus and method for vacuum freeze drying

An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.

Ion implanting apparatus

A control method of an ion implantation device that radiates an ion beam emitted from an ion source via an optical element onto a material to be treated, includes the steps of: measuring the spatial distribution of the ion beam in the vicinity of the material to be treated; estimating the emittance, which is the spatial and angular distribution of the ion beam of the ion source, from the measured spatial distribution, by using an ion beam trajectory calculation method; calculating the operating conditions of the optical element so that the ion beam in the vicinity of the material to be treated has a desired spatial distribution, by using the estimated emittance and the trajectory calculation method; and operating the ion implantation device by using the calculated operating conditions of the optical element.

Ion implantation device control method, control system thereof, control program thereof, and ion implantation device

To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10&#xb0;. In the ion implantation device, first, second and third chambersA,A andA are arranged in predetermined places on a beam line, first and second gapsA andA intervene between the first chamberA and the second chamberA and between the second chamberA and the third chamberA, the second chamberA is electrically insulated from the first and third chambersA andA via first and second electrode pairsA andA attached to the first and second gapsA andA, respectively, the first and second electrode pairsA andA obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamberis connected to a scanning power sourceA which applies an electric potential having desired scanning waveform.

Ion implantation device

An ion implantation apparatus is provided with an ion source and a mass spectrometer having an analyzer magnet and is adapted to take out ions having a predetermined kinetic energy and mass from other ions produced in the ion source. It further includes a scanner system for scanning an ion beam of the take-out ions and irradiating the ion beam onto a substrate. The scanner system includes a deflection electro-magnet which is disposed downstream of the mass spectrometer for deflecting the ion beam in a predetermined plane with respect to a reference axis. A second vacuum chamber portion through which the ion beam passes in the magnetic field of the deflection electro-magnet is provided and a first vacuum chamber portion electrically independent of the second vacuum chamber portion is also provided through which the ion beam passes in the magnetic field of the mass analyzer. A third vacuum chamber portion is also provided through which the ion beam passes and in which the substrate is arranged for irradiation. The second vacuum chamber portion is applied by a potential for modulating the potential of the ion be and the deflection electro-magnet defects the modulated ion beam so that the deflection angle of the ion beam is modulated and the ion beam is scanned and irradiated onto the substrate.

Ion implantation apparatus

Growing community of inventors

Chigasaki, Japan

Seiji Ogata