Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Nikon Corporation

Kioxia Corporation

Hemicellulose Ltd.

Discovision Associates

Research Investment Network, Inc.

Sotec Co., Ltd.

Seiji Morita

Koji Takazawa

Hideo Ando

Kazuyo Umezawa

Naoki Morishita

Yasuaki Ootera

Naomasa Nakamura

Masatoshi Sakurai

Shinobu Sugimura

Ryosuke Yamamoto

Shinichi Ito

Yoshiyuki Kamata

Ryuichi Saito

Hiroyuki Matsumoto

Kei Kobayashi

Shinichi Katsuda

Ryoichi Suzuki

Akira Kikitsu

Soichi Inoue

Satoshi Shirotori

Kenichi Sato

Tomoaki Sawabe

Takeshi Okino

Tatsuhiko Higashiki

Yusuke Kasahara

Masatoshi Hayashi

Satomi Yoshibe

Jin Nasukawa

Laksmi Kusumawardhani

Koji Asakawa

Hiroaki Nakamura

Katsuyuki Naito

Takashi Hirano

Takuya Shimada

Takashi Sato

Tsukasa Nakai

Hirokazu Kato

Akiko Yuzawa

Isahiro Hasegawa

Koichi Matsuno

Norikatsu Sasao

Kei Hattori

Kazuto Matsuki

Anupam Mitra

Ryoji Yoshikawa

Takeharu Motokawa

Hiroshi Konishi

Madoka Nishiyama

Masahiro Kanno

Kazuyo Morita

Tetsuya Kamigaki

Laksmi Kusuma Wardhani

A resin composition for molding having excellent heat resistance, hardness, cost-effectiveness and biodegradability is provided by using amorphous resin material components extracted from plant-derived wood. The resin composition includes a first resin including a hemicellulose or a hemicellulose derivative and a second resin including polymethylmethacrylate (PMMA, acrylic), polycarbonate (PC), cyclo olefin polymer (COP), cyclo olefin copolymer (COC), polypropylene (PP), polyethylene (PE), polyethylene terephthalate (PET), or polystyrene (PS) and has excellent injection moldability.

Resin composition and molding method thereof

A resin composition for molding having excellent heat resistance, hardness, cost-effectiveness, and biodegradability is provided by using an amorphous resin material component extracted from plant-derived wood. The resin composition is a hemicellulose monomer obtained by applying a methacrylation reaction or acrylation reaction to a hemicellulose or hemicellulose derivative and has a molecular structure in which a methacrylic group or acryloyl group is bonded to the hemicellulose or hemicellulose derivative. This hemicellulose monomer has excellent injection moldability.

A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

Pattern forming material and pattern forming method

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

According to one embodiment, a template for imprint patterning processes comprises a template substrate having a first surface and a pedestal on the first surface of the template substrate, the pedestal having a second surface spaced from the first surface in a first direction perpendicular to the first surface. A pattern is disposed on the second surface. The pedestal has a sidewall between the first surface and the second surface that is at an angle of less than 90&#xb0; to the second surface.

Template, template manufacturing method, and semiconductor device manufacturing method

In one embodiment, a pattern forming method includes forming a first film on a substrate. The method further includes supplying energy to the first film to form a first region to which the energy have been supplied, and a second region including at least a region to which the energy has not been supplied. The method further includes impregnating at least the first region out of the first and second region with metal atoms. The method further includes developing the first film after impregnating the first region with the metal atoms to remove the second region while leaving the first region.

Pattern forming method and method of manufacturing semiconductor device

A pattern-forming method includes forming a first film above a material to be processed, processing the first film into a pattern to be formed in the material to be processed, providing a second film on the first film and the material to be processed, supplying a precursor containing at least one of a metal material or a semiconductor material to the second film, removing the first film, and processing the material to be processed using the second film impregnated with at least one of the metal material and the semiconductor material, as a mask.

Pattern-forming method

According to one embodiment, a substrate processing apparatus comprises a chamber for a substrate that has a target film thereon. The apparatus includes a first gas introducing unit to introduce a precursor gas into the chamber, a second gas introducing unit that introduces a etching gas for etching the target film into the chamber, and a controller configured to control the first gas introducing unit and the second gas introducing unit to cause the first gas and the second gas to be alternately introduced to the chamber.

Substrate processing apparatus, substrate processing method, and semiconductor device fabrication method

In one embodiment, a resist material to be used in an imprint process includes a diluent monomer having a hydroxyl group and at least one functional group selected from a vinyl ether group, an epoxy group and an oxetanyl group. The material further includes a dendrimer having at least two reactive groups for photo-cationic polymerization. The material further includes a photo-acid generator as a polymerization initiator.

Resist material and pattern forming method using same

According to one embodiment, a pattern forming method includes supplying, onto an under layer, a self-organization material including a block copolymer which includes a first polymer and a second polymer, and a third polymer having a molecular structure with oxygen attached to a cyclic structure, wherein the third polymer is bonded to the first polymer, and phase-separating the block copolymer to form a phase-separation pattern on the under layer.

Pattern forming method, self-organization material, and method of manufacturing semiconductor apparatus

A pattern forming method includes forming a guide pattern on a substrate including first and second regions and applying a directed self-assembly material including a first and a second polymer portion to the substrate. The first region is irradiated with an energy beam. The substrate is subjected to a heating process after irradiation and the directed self-assembly material in the second region separates into a first polymer phase and a second polymer phase. The directed self-assembly material is removed from the first region after irradiation.

Pattern forming method

A template defect inspection method using an optical system includes emitting linearly polarized light to a template having a metal film formed on at least part of a concave-convex structure that is formed on a substrate and that has a line-and-space pattern, acquiring information on a polarization-rotated component, which is different from linearly polarized light incident on the template, of light reflected by the template in accordance with the emission thereto, converting the acquired information on the polarization-rotated component into an electrical signal, and processing the electrical signal.

Template defect inspection method

A semiconductor memory device includes a stacked body including a first electrode layer and a second electrode layer stacked on the first electrode layer, and first and second interconnections on a first surface of the stacked body. The first and second electrode layers have first and second end surfaces respectively in the first surface. The first interconnection is electrically connected to the first electrode layer through a first region of the first end surface; and the second interconnection is electrically connected to the second electrode layer through a second region of the second end surface. The first and second interconnections extend in a first direction on the first surface. The first and second regions are arranged in a second direction crossing the first direction with a crossing angle smaller than 90 degrees. The first region and the second region each have a boundary along the second direction.

Semiconductor memory device and method for manufacturing same

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Yokohama, Japan

Seiji Morita