Hexatech, Inc.

Seiji Mita

Jinqiao Xie

Baxter F Moody

The invention provides a power semiconductor device including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10cmand the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and a power semiconductor structure comprising at least one doped AlGaN layer overlying the aluminum nitride single crystalline substrate.

Power semiconductor devices incorporating single crystalline aluminum nitride substrate

The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10cmand the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10A/cmat &#x2212;10 V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm.

Optoelectronic devices incorporating single crystalline aluminum nitride substrate

The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10cmand the Full Width Half Maximum (FWHM) of the double axis rocking curve for the (002) and (102) crystallographic planes is less than about 200 arcsec; and an ultraviolet light-emitting diode structure overlying the aluminum nitride single crystalline substrate, the diode structure including a first electrode electrically connected to an n-type semiconductor layer and a second electrode electrically connected to a p-type semiconductor layer. In certain embodiments, the optoelectronic devices of the invention exhibit a reverse leakage current less than about 10A/cmat &#x2212;10V and/or an L80 of at least about 5000 hours at an injection current density of 28 A/cm.

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Cary, NC, United States of America

Seiji Mita