Panasonic Corporation

Seiji Matsuyama

Jun Suzuki

Kenji Yoneda

A semiconductor device includes: a semiconductor substrate; an interface layer formed on the semiconductor substrate; a high-k gate dielectric film formed on the interface layer; and a gate electrode formed on the high-k gate dielectric film. The high-k gate dielectric film contains La. The high-k gate dielectric film has the higher La concentration in an interface with the gate electrode than in an interface with the interface layer.

Semiconductor device and manufacturing method thereof

In an insulating film formation method, a cycle A in which Oat a low flow rate is supplied onto a substrate and then Osupplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M&#x2267;1), and a cycle B in which Oat a high flow rate is supplied onto the substrate and then Osupplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N&#x2267;1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.

Growing community of inventors

Ibaraki, Japan

Seiji Matsuyama