Sharp Kabushiki Kaisha Corporation

Seiji Kaneko

Yohsuke Kanzaki

Takao Saitoh

Masaki Yamanaka

Masahiko Miwa

Yi Sun

Yutaka Takamaru

Kohhei Tanaka

Seiichi Uchida

Shigeyasu Mori

Yasuyuki Ogawa

Kaoru Yamamoto

Kazuatsu Ito

Makoto Nakazawa

Keisuke Ide

Hiroshi Matsukizono

Tomoya Baba

Hiroyuki Ogawa

Mitsuhiro Murata

Tohru Okabe

Hidehito Kitakado

Yasuhiro Sugita

Naoki Ueda

Shinsuke Saida

Kazutoshi Kida

Tadayoshi Miyamoto

Shinji Yamagishi

Takuya Matsuo

Alberto Oscar Adan

Ryosuke Gunji

Shinji Ichikawa

Yuhji Yashiro

Akira Shibazaki

Ken Kuboki

Noriaki Yamaguchi

Yl Sun

A first connection wire electrically connected to a first electrode via a first through-hole formed in a second flattening film, and a second connection wire electrically connected to the first connection wire via a second through-hole formed in a first flattening film are provided, and a second interlayer insulating film has a contact opening so as to pass through the second interlayer insulating film to overlap the first connection wire, and such that the edge of the contact opening surrounds the first through-hole and the second through-hole in a plan view.

Display device with interlayer insulating film having column slit for power-source line

A display device () includes: a substrate (); and a first transistor (a) formed on the substrate (). The first transistor (a) includes: an oxide semiconductor layer () formed on the substrate (); a gate insulating layer () formed on the oxide semiconductor layer (); and a gate electrode () formed on the gate insulating layer (). The oxide semiconductor layer () includes: a conductive region (a) provided with conductivity; a first resistance region (b) positioned below the gate electrode (); and a second resistance region (c) provided between the conductive region (a) and the first resistance region (b), and positioned outside the gate electrode (). The first resistance (b) is larger in resistance than the second resistance region (c).

Method for manufacturing display device, and display device

In a method for manufacturing an active matrix substrate, forming of an underlayer inorganic insulating film includes applying a resist onto the underlayer inorganic insulating film, performing an ashing process of forming a surface having irregularities on a surface of the resist by a first ashing process, and, after the ashing process has been performed, roughening a surface of the underlayer inorganic insulating film by performing a second ashing process and an etching process on the underlayer inorganic insulating film. When forming a semiconductor film, a surface of at least a part of the semiconductor film is roughened following a rough surface of the underlayer inorganic insulating film.

Method for manufacturing active matrix substrate, and active matrix substrate

A first metal layer that is formed by a first metal film is provided in an island shape along a pair of third wiring lines that is adjacent to each other. The first metal layer overlaps a region that is surrounded by a pair of first wiring lines, among several first wiring lines extending parallel to each other and formed by a first metal film, that is adjacent to each other, and the pair of third wiring lines, among several third wiring lines extending parallel to each other and in a direction intersecting each of the several first wiring lines.

Display device

First overlying wires are provided between a display area and a bending portion, extending parallel to each other in a direction crossing the direction in which the bending portion extends. Underlying wires are provided between a first resin layer and a second resin layer on a resin substrate, extending across a slit and parallel to each other in a direction crossing the direction in which the bending portion extends. The first overlying wires are electrically connected respectively to the underlying wires via first contact holes formed through the second resin layer and inorganic insulation films.

A TEG near the perimeter of a frame region is away from a TFT, which is disposed in a display region and is actually used for screen display. Hence, the characteristics of the TEG can change in a manner different from that in the characteristics of the TFT within the display region. Accordingly, provided is a display device that includes a TEG pattern disposed between the display region and a trench, and includes a dummy pixel circuit disposed between the display region and a barrier wall. The TEG pattern is outside the display region and is adjacent to at least the dummy pixel circuit.

A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.

Display device with a controlled thickness

A first wiring line and a second wiring line are extended to an upper face of a resin substrate exposed from a slit formed in at least one layer of an inorganic insulating film, a first flattening film is provided within the slit which exposes the upper face of the resin substrate between the portions to which the first wiring line and the second wiring line are extended, and the first wiring line and the second wiring line are electrically connected to each other via a third wiring line provided between an end face of the first flattening film and the upper face of the resin substrate.

A display device includes a display layer that includes a TFT layer, a light-emitting element layer, a sealing layer, a bank, and a touch panel layer. The touch panel layer includes a plurality of touch-panel-use lines electrically connecting a terminal section to a plurality of sensing sections configured to transfer measurements. The plurality of touch-panel-use lines resides on the sealing layer so as to intersect with the bank in a plan view of the display device. The plurality of touch-panel-use lines comprises a first touch-panel-use line and a second touch-panel-use line that are adjacent to each other, an interlayer insulation film being interposed between the first touch-panel-use line and the second touch-panel-use line in an intersection where the first touch-panel-use line and the second touch-panel-use line intersect with the bank.

A method for manufacturing a display device includes a pixel circuit formed on a substrate, wherein a manufacturing process of the pixel circuit includes a patterning step of a metal film performed in the following procedures (a) to (e): (a) forming the metal film on the substrate; (b) forming a first resist pattern on the metal film by a photolithographic method; (c) etching the metal film with the first resist pattern to form a first metal pattern; (d) forming by the photolithographic method on the metal film formed in the first metal pattern, a second resist pattern including a pattern shape smaller than a pattern shape of the first resist pattern; and (e) etching the metal film with the second resist pattern to form a second metal pattern.

Method for producing display device

A display device is provided with a display area and a frame area on a flexible substrate. The display area includes a transistor and a light-emitting element, and the frame area surrounds the display area. The display device includes: an upper inorganic insulating film, a first upper metal layer, a first resin layer, a protective layer, a second upper metal layer, a second resin layer, and a third resin layer provided in a stated order above a semiconductor layer of a transistor. In a display area, the protective layer covering a whole upper face of the first resin layer comes into contact with an upper wire included in the second upper metal layer.

An active matrix substrate includes a plurality of first contact holes extending through an inorganic insulating film, a first protection layer that is a silicon nitride film, and a second protection layer, a plurality of second contact holes extending through the inorganic insulating film and the second protection layer, a first transistor, and a second transistor. A channel region of the second transistor does not overlap the first protection layer.

Active-matrix substrate and display device

In an organic electroluminescence (EL) display device, a display region and a first frame region are defined in a substantially circular shape or a substantially oval shape, and in a bending portion, an opening is formed in an inorganic layered film, and a frame flattening film is provided to fill the opening. An end portion of the opening on the display region side is formed along an arc of the first frame region on the bending portion side.

Display device having circular, oval, polygonal frame with opening in bending portion

A display device includes: a resin substrate; a TFT layer; a bending portion; at least one inorganic film forming the TFT layer; an interlayer insulating film forming the TFT layer; and a plurality of wires forming the TFT layer, wherein the at least one inorganic film and the interlayer insulating film include an opening disposed at the bending portion, the at least one inorganic film includes a plurality of island-shaped inorganic films remaining in the opening, each of the plurality of wires overlaps a corresponding island-shaped inorganic film among the plurality of island-shaped inorganic films, and the display device includes a metal layer in a form of islands disposed between each of the plurality of wires and the corresponding island-shaped inorganic film overlapping each of the plurality of wires, the metal layer being in contact with each of the plurality of wires.

Display device including island-shaped inorganic films

In a bending portion, a slit that exposes a resin substrate is formed in at least one inorganic insulating film, a first flattening film is provided so as to fill in the slit, each of a plurality of wiring lines is provided on the first flattening film and both end portions of the inorganic insulating film, the slit being formed at both end portions, a second flattening film is provided on each of the wiring lines, a plurality of conductive layers each having an island shape are provided on the second flattening film, and each of the wiring lines and a corresponding conductive layer are electrically connected via contact holes formed in the second flattening film.

Growing community of inventors

Sakai, Japan

Seiji Kaneko