Canon Kabushiki Kaisha

Conon Kabushiki Kaisha

Seiji Kamei

Kei Fujita

Yutaka Akino

Mineo Shimotsusa

Kenji Makino

Hiroshi Yuzurihara

Hideshi Kuwabara

Tetsuo Asaba

Yutaka Yuge

Yuzo Kataoka

Osamu Koyama

Katsumi Kurematsu

Yasuhiro Sekine

Shigeyuki Matsumoto

Yukihiro Hayakawa

Hiroyuki Nakamura

Toshihiko Ichise

Yasuhiro Naruse

Genzo Monma

Shunichi Kaizu

Yuzo Kayaoka

In a process for forming an interlayer insulating film using an SOG film, a process for manufacturing an interlayer insulating film comprising the steps of irradiating a first inorganic SOG film with ultraviolet light in an atmosphere containing oxygen components to generate ozone and active oxygen atoms in order to irradiate the SOG film with the atoms, and further forming a second inorganic SOG film thereon.

Process for manufacturing interlayer insulating film and display apparatus using this film and its manufacturing method

An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Manufacturing method of a semiconductor apparatus having an electron

A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

Method of manufacturing a ROM device having contact holes treated with

Method of forming metal pattern including a schottky diode

Method of forming a capacitor having contact hole treated with hydrogen

A semiconductor device has transistors, each transistor having a first conduction type of a first semiconductor region including a first main electrode region, a second conduction type of second semiconductor region including a channel region which is provided in the first semiconductor region, a second main electrode region provided in the second semiconductor region, a gate electrode on the channel region extending through a gate insulating film between the first and second main electrode regions. A portion of the first main electrode region which contacts the channel region is a high-resistance region. The semiconductor device also has buried-type element isolation regions which prevent the occurrence of latch up and bird's beaks in the device.

Semiconductor device for driving heat generator

A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.

Substrate for recording head, recording head and method for producing

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Hiratsuka, Japan

Seiji Kamei