Murata Manufacturing Co., Ltd.

Murata Manufacturingco., Ltd.

Seiji Kai

Hisashi Yamazaki

Mitsuyoshi Hira

Makoto Sawamura

Yutaka Kishimoto

Tsutomu Takai

Koji Yamamoto

Yuzo Kishi

Takeshi Nakao

Motoji Tsuda

Takashi Yamane

Yuji Miwa

Atsushi Tanaka

Taku Kikuchi

Munehisa Watanabe

Takao Mukai

Takuya Koyanagi

Noriyoshi Ota

Toru Takeshita

Masahiro Fukushima

Daisuke Ajima

Shin Saijo

Takashi Naka

Shintaro Nakatani

An acoustic wave device includes a support, a piezoelectric layer on the support, a functional electrode at the piezoelectric layer, a frame-shaped support frame on the piezoelectric layer and surrounding the functional electrode in plan view in a stacking direction of the support and the piezoelectric layer, and a lid covering an opening of the support frame, wherein the support includes a first cavity overlapping at least a portion of the functional electrode in the plan view, a second cavity defined by the piezoelectric layer, the support frame, and the lid between the piezoelectric layer and the lid, the piezoelectric layer includes a through hole communicating with the first and second cavities, and a gas is provided in the first and second cavities.

Acoustic wave device

An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, a functional electrode at the piezoelectric layer, a frame-shaped support frame on the piezoelectric layer and surrounding the functional electrode in a plan view in a stacking direction of the support and the piezoelectric layer. A lid covering an opening of the support frame, wherein the support includes a first cavity at a position overlapping at least a portion of the functional electrode in the plan view, a second cavity defined by the piezoelectric layer, the support frame, and the lid between the piezoelectric layer and the lid. The piezoelectric layer includes a through hole communicating with the first and second cavities, and the first and second cavities are under vacuum.

An acoustic wave device includes a piezoelectric substrate including a support substrate and a piezoelectric layer on the support substrate, the piezoelectric substrate including a first principal surface on the piezoelectric layer side, and a second principal surface on the support substrate side, an IDT electrode on the first principal surface, a support layer on the support substrate, a cover on the support layer, a through-via electrode provided through the support substrate and electrically connected to the IDT electrode, a first wiring electrode on the second principal surface of the piezoelectric substrate and electrically connected to the through-via electrode, and a protective film on the second principal surface to cover at least a portion of the first wiring electrode. The protective film is provided on an inner side of the support layer when viewed in a direction normal or substantially normal to the second principal surface.

Acoustic wave device, high-frequency front end circuit, communication device, and method for manufacturing acoustic wave device

An elastic wave device manufacturing method includes a preparing a piezoelectric wafer on which IDT electrodes are provided in elastic wave device forming portions, providing on a first main surface of the piezoelectric wafer support layers in the elastic wave device forming portions, bonding a cover member to cover the support layers to obtain a multilayer body, cutting the multilayer body in a first direction multiple times, cutting the multilayer body in a second direction orthogonal to the first direction to obtain elastic wave devices, in which a resin layer extends across a boundary between the elastic wave device forming portions adjacent to each other on the first main surface of the piezoelectric wafer, and the second cutting step is performed in a state in which the resin layer is present.

Elastic wave device manufacturing method, elastic wave device, radio-frequency front-end circuit, and communication device

An acoustic wave device includes a silicon support substrate that includes first and second main surfaces opposing each other, a piezoelectric structure provided on the first main surface and including the piezoelectric layer, an IDT electrode provided on the piezoelectric layer, a support layer provided on the first main surface of the silicon support substrate and surrounding the piezoelectric layer, a cover layer provided on the support layer, a through-via electrode that extending through the silicon support substrate and the piezoelectric structure, and a first wiring electrode connected to the through-via electrode and electrically connected to the IDT electrode. The piezoelectric structure includes at least one layer having an insulating property, the at least one layer including the piezoelectric layer. The first wiring electrode is provided on the layer having an insulating property in the piezoelectric structure.

Acoustic wave device, high-frequency front-end circuit, and communication device

In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.

An elastic wave device includes a multilayer film stacked on a support substrate. A first support layer surrounds a region including interdigital transducer electrodes. A second support layer is disposed in the region surrounded by the first support layer. A cover is fixed on the first support layer and the second support layer so as to close a cavity defined by the first support layer. The multilayer film is partially disposed on the support substrate, and an insulating layer is disposed in at least a portion of a region in which the multilayer film is not disposed. At least one of the first support layer and the second support layer is disposed on the insulating layer.

Elastic wave device

An elastic wave device includes a piezoelectric thin film provided on a low acoustic velocity film and an IDT electrode provided on the piezoelectric thin film, wherein the piezoelectric thin film is made of a piezoelectric single crystal and includes a first principal surface that is a positive surface in a polarization axis direction and a second principal surface that is a negative surface in the polarization axis direction. The first principal surface of the piezoelectric thin film faces the low acoustic velocity film, and the second principal surface faces the IDT electrode.

An elastic wave device includes a piezoelectric substrate, functional electrodes on the piezoelectric substrate, a support layer on the piezoelectric substrate with a frame shape surrounding the functional electrodes, a cover member on the support layer to seal an opening of the support layer, the cover member including a first main surface facing the support layer, and a second main surface opposite to the first main surface. Recesses are located in the cover member and are open to the second main surface. Via holes extend through the support layer and to bottom surfaces of the recesses of the cover member, the via holes each including an opening that is open to the bottom surface. The area of the opening of each of the via holes is not more than the area of the bottom surface of the corresponding recess of the cover member. First via conductor portions are provided in the via holes and second via conductor portions are provided in the recesses of the cover member.

Elastic wave device and method for manufacturing the same

An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode has a width of about 6 &#x3bc;m and extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

Functional element units and a connection line electrically connecting the functional element units are formed on one principal surface of a piezoelectric motherboard. A resin support layer enclosing the functional element units is formed on the one principal surface of the motherboard. An elastic wave device with the functional units is obtained by dividing a multilayer body including the motherboard, the functional element units, and the support layer into a plurality of sections along a dicing line. The connection line includes a line main body positioned on the dicing line, and a connection unit in which the line main body and the functional element units are electrically connected. Prior to dividing the multilayer body, a retaining member made of resin which straddles the line main body in the width direction of the line main body is formed separate from the support layer on the motherboard.

An elastic wave device includes a support substrate, a film stack including a piezoelectric thin film, and an IDT electrode. The film stack is partially absent in a region outside a region where the IDT electrode is located in plan view. The elastic wave device further includes a support layer located on the support substrate in at least a portion of a region where the film stack is partially absent and surrounds a region where the film stack is located in plan view and a cover member located on the support layer. The cover member defines a hollow space facing the IDT electrode together with the piezoelectric thin film and the support layer.

A surface acoustic wave device assembly includes a collective board, first circuit portions provided on the collective board and respectively including first hot terminals and first ground terminals, a second circuit portion provided on the collective board and including second hot terminals and second ground terminals, and a power supply wiring provided on the collective board so as to surround the periphery of the first circuit portions and the second circuit portion. The first circuit portions include surface acoustic wave devices defining band pass filters. The second circuit portion defines a band pass filter. The first ground terminals and first hot terminals, and the second ground terminal are connected to the power supply wiring, the second hot terminals are not connected to the power supply wiring, and pass bands of the surface acoustic wave devices and a pass band of the band pass filter defined by the second circuit portion are the same or substantially the same.

Surface acoustic wave device assembly

In a surface acoustic wave device, a conductor pattern is located on a main surface of a piezoelectric substrate and includes a surface acoustic wave element pattern, a pad and a feed line that is electrically connected to the pad and extends up to an outer peripheral edge of the main surface. The piezoelectric substrate and a cover are bonded to each other with a support layer therebetween that includes a frame extending along the outer peripheral edge of the main surface so that a gap is provided between the frame and the outer peripheral edge and includes a pad adjacent portion on the pad. Thus, a closed space is surrounded by the piezoelectric substrate, the cover and the frame. The support layer further includes a reinforcement portion that intersects a feed line at or near an intersection portion in which a separated portion of the frame that is separated from the pad adjacent portion intersects the feed line.

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Nagaokakyo, Japan

Seiji Kai