Sharp Kabushiki Kaisha Corporation

Seiji Ishihara

Yuji Yano

Yasuki Fukui

Hiroyuki Juso

A semiconductor device includes: a base substrate; a semiconductor chip formed on the base substrate in such a manner that an adhesive layer is interposed between the semiconductor chip and the base substrate; a resin layer covering at least a portion of the semiconductor chip; and an external connection terminal electrically connected to the base substrate via a wiring layer. The external connection terminal is in the same plane as the surface of the resin layer, and is exposed from the resin layer. With this configuration, it is possible to provide a semiconductor device of a lower stage, and a stacked semiconductor device, each of which is high in connection reliability in a case of stacking plural semiconductor devices, no matter if a connection terminal of a semiconductor device stacked on an upper stage is low.

Semiconductor device, stacked semiconductor device, and manufacturing method for semiconductor device

A wiring substrate of the present invention includes a terminal section, provided on a first surface of an insulating substrate, for wire or flip-chip bondings; a land section, provided on the insulating substrate, for an external connection terminal; wiring patterns, respectively provided on the first surface and a second surface on the other side of the first surface, for making electrical connection between the terminal section and the land section; and a support pattern, provided on the second surface corresponding in position to the terminal section, for improving bondings. The wiring substrate can relieve connection failure in bondings.

Growing community of inventors

Kashihara, Japan

Seiji Ishihara