Kabushiki Kaisha Toshiba

Seiji Imai

Takashi Shinohe

Naoharu Sugiyama

Tsutomu Tezuka

Atsushi Kurobe

Yoshiko Hiraoka

A semiconductor device includes an SiC substrate, an SiC layer of a first conductivity type disposed on the upper surface of the SiC substrate, a first SiC region of a second conductivity type disposed on the SiC layer, a second SiC region of the first conductivity type disposed on a surface region of the first SiC region, including a nitrogen-added first sub-region and a phosphorus-added second sub-region disposed in contact with the first sub-region, a gate insulating film disposed to extend over the SiC layer, first SiC region, and first sub-region of the second SiC region, a gate electrode formed on the gate insulating film, a first electrode formed on the second sub-region of the second SiC region and the first SiC region, and a second electrode formed on the lower surface of the SiC substrate.

Silicon carbide high breakdown voltage semiconductor device

A semiconductor device comprises a semiconductor substrate, a first semiconductor layer under compressive strain formed on the semiconductor substrate, a p-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in a predetermined region of the first semiconductor layer, a second semiconductor layer in a lattice-relaxation condition formed on the first semiconductor layer in a region other than the predetermined region with an insulating film lying therebetween, wherein the insulating film has an opening and the first and second semiconductor layers are connected through the opening, a third semiconductor layer under tensile strain formed on the second semiconductor layer, and an n-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in the third semiconductor layer.

Growing community of inventors

Kawasaki, Japan

Seiji Imai