Hitachi, Ltd.

Hitchi, Ltd.

Seiji Heike

Tomihiro Hashizume

Yasuo Wada

Masayoshi Ishibashi

Munehisa Mitsuya

Seiichi Kondo

Yasushi Tomioka

Hideaki Koizumi

Satoshi Watanabe

Tsuyoshi Yamamoto

Tsuneo Ichiguchi

Akira Nambu

Mark I Lutwyche

Mark Lutwyche

Provided is a scanning probe microscope that takes measurements at high spatial resolution on physical information such as array structure of water molecules at a specimen-culture fluid interface in a culture fluid as well as irregularities of the surface of a specimen and composition distribution and array structure of molecules, proteins, etc. even in the atmosphere, an ambient air, vacuum, among others. The scanning probe microscope includes: a probing needle (); a specimen holder () in which a specimen () is mounted; an oscillator () that produces a periodic oscillation to change the probing needle position; a pulse oscillation type laser light source () that emits light toward a spot, which is put under measurement by the probing needle, on the specimen; a detector () that measures intensity of output light which is output from the specimen by energy spectroscopy; and a control device (). The control device decreases amplitude of the periodic oscillation to change the probing needle position by the oscillator, shortens a relative distance between the probing needle and the specimen, and synchronizes shortening of the distance between the probing needle and the specimen and emission of pulse oscillation laser light, thus optimizing efficiency of tip-enhanced detection.

Scanning probe microscope and measuring method using same

A magnetic force microscope capable of measuring the absolute value of a magnetic field with high resolution without causing a change in magnetization state of the probe. The magnetic force microscope includes a cantilever, a probe, a displacement detector that detects a displacement of the probe, a specimen carrier, and various transfer units. The magnetic force microscope that measures an undulation distribution as well as a magnetic field distribution on the surface of a specimen placed on the specimen carrier is further provided with a magnetic-field impress-unit that impresses a magnetic field to the probe, and an output of the magnetic-field impress-unit is controlled such that a magnetic force impressed onto the probeis turned zero to thereby measure a magnetic field distribution on the surface of the specimen.

Magnetic force microscope and magnetic field observation method using same

A method of coating by supplying a liquid material from a nozzle tip to form a film on a substrate surface facing to the nozzle, having the steps of: preparing a translation mechanism, which is capable of moving the nozzle in an in-plane direction and in a thickness direction of the substrate; making the nozzle to come gradually closer to the substrate, after positioning of the nozzle on the in-plane of the substrate, by using the translation mechanism; detecting electric current flowing through the nozzle from the substrate surface, when a semiconductor droplet supplied from the nozzle tip contacts with an electrode installed at the substrate surface; stopping accession of the nozzle to the substrate, when the electric current exceeds threshold value set in advance; and making the nozzle tip apart from the substrate farther than in the stopping, so as to coat the substrate with the liquid material.

Method of coating substrate

In an oscillating apparatus or a frequency detecting apparatus in which a center frequency and a variable frequency range are freely or optionally established with a high stability and a high accuracy, a first frequency component of a signal from a first crystal oscillator and a second frequency component of another signal from a second crystal oscillator are subjected to a synthesizing operation in a synthesizer and to other operations to obtain a desired center frequency and a desired variable frequency range.

Oscillator and frequency detector

Current passed through a resist layer or insulating layer is controlled by changing the amplitude of an AC voltage to provide an electron exposure device or electric characteristics evaluation device using a scanning probe.

Electron exposure device and method and electronic characteristics evaluation device using scanning probe

To provide an electron exposure apparatus capable of providing high resolution and performing electron exposure at high speed, integrated tips are used. Only the tips provided at ends control distances between the tips and the surface of a wafer, and the tips used for electron exposure follow the wafer according to deformations of cantilevers, which occur due to the Coulomb force resultant from a voltage applied to each tip.

Electron exposure apparatus

A device according to the present invention is a miniaturized efficient device wherein electromechanical transduction is enabled and which is provided with at least an integrated electrostatic actuator provide with an actuator in which a fixed portion and a movable portion are opposite, a plurality of which are arranged and the relative amount of movement of which is controlled by controlling electrostatic force operating between both, the movable portion moved by the integrated electrostatic actuator and a portion connected to the movable portion which can be operated mechanically. The probe of a scanning probe microscope is provided to the movable portion of the above actuator. The above transducer is provided with the structure in which a large number of such actuators are arranged two- or one-dimensionally.

Micro-fabricated device with integrated electrostatic actuator

A buffer circuit ID provided for connecting an atom level device (for example, an Atom Relay Transistor circuit), formed by arranging atoms in a predetermined pattern, to a device such as a semiconductor device and a quantum device. The buffer circuit can be formed as a voltage or current amplification circuit. The voltage amplification circuit may be a single electron transistor circuit, and the current amplification circuit may be an avalanche amplification device circuit. The Atom Relay Transistor circuit and the device such as a semiconductor device and a quantum device are formed substantially on the same flat insulating member, and connected by a fine connection structure made of a conductive body such as metal.

Buffer of fine connection structure for connecting an atom level circuit

A surface of an insulator or semiconductor substrate is irradiated with a beam such as an electron beam, an electromagnetic wave beam, an ion beam, etc. to excite carriers so as to form an electrical conductive layer on the surface of and in the inside of the substrate to thereby make it possible to perform observation and micro working on the insulator by using a scanning tunneling microscope.

Growing community of inventors

Kawagoe, Japan

Seiji Heike