Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Globalfoundries Inc.

Seiichiro Tachibana

Takeru Watanabe

Jun Hatakeyama

Takeshi Kinsho

Tsutomu Ogihara

Koji Hasegawa

Tsunehiro Nishi

Mutsuo Nakashima

Daisuke Kori

Kazumi Noda

Masaki Ohashi

Youichi Ohsawa

Yoshinori Taneda

Keisuke Niida

Takashi Sawamura

Martin Glodde

Tomohiro Kobayashi

Takafumi Ueda

Wu-Song S Huang

Toshiharu Yano

Rie Kikuchi

Hiroko Nagai

Shiori Nonaka

Tsukasa Watanabe

Rudy J Wojtecki

Satoshi Watanabe

Wai-Kin Li

Ratnam Sooriyakumaran

Daniel Sanders

Dario Leonardo Goldfarb

Gregory Breyta

Kazuhiro Katayama

Karen Elizabeth Petrillo

Yusuke Biyajima

Toshihiko Fujii

Katsuhiro Kobayashi

Kenji Funatsu

Javier J Perez

Alexander Edward Hess

Hiroki Nonaka

Yoshio Kawai

Masayoshi Sagehashi

Hoa D Truong

Kazunori Maeda

Takeshi Nagata

Shozo Shirai

Margaret C Lawson

Takayoshi Nakahara

Takao Yoshihara

Romain Lallement

Ryo Mitsui

Yukio Abe

Satoru Kitano

Satoshi Shinachi

Hironori Satoh

Naoki Kobayashi

Fumihiro Hatakeyama

Taiki Kobayashi

A material for forming an organic film contains (A) a polymer having a repeating unit shown by the following general formula (1), and (B) an organic solvent. In the general formula (1), AR1, AR2, AR3, and AR4 each represent a benzene ring or a naphthalene ring; W1 represents a tetravalent organic group having 6 to 70 carbon atoms and at least one or more aromatic rings; and W2 represents a divalent organic group having 1 to 50 carbon atoms. An object of the present invention is to provide: a material for forming an organic film to enable high etching resistance and excellent twisting resistance without impairing the resin-derived carbon content; a patterning process using this material; and a polymer suitable for such a material for forming an organic film.

Material for forming organic film, patterning process, and polymer

A material for forming organic film contains (A) compound shown by general formula (1) and/or polymer having repeating unit shown by general formula (4), and (B) organic solvent. In formula (1), AR1, AR2, AR3, AR4, AR5, and AR6 each represent benzene ring or naphthalene ring; R1 represents any group shown in following formula (2); “n” represents integer of 1 or 2; and W represents divalent organic group having 2-50 carbon atoms. In formula (4), AR1, AR2, AR3, AR4, AR5, AR6, R1, “n”, and W are as defined above; and R2 and R3 each represent hydrogen atom or organic group having 1-20 carbon atoms, and optionally bond to each other within molecule to form cyclic organic group. An object provides a material for forming organic film to enable high etching resistance and excellent twisting resistance without impairing resin-derived carbon content; and compound and polymer suitable for material for forming organic film.

Material for forming organic film, patterning process, compound, and polymer

The present invention is a resist material containing: (i) a compound (i-1), which is a (partial) condensate or a (partial) hydrolysis-condensate of a metal compound shown by the following general formula (A-1), or a compound (i-2), which is a reaction product of the compound (i-1) and a dihydric or trihydric alcohol shown by the following general formula (A-2), (ii) a photo-acid generator, (iii) a basic compound, and (iv) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.M(OR)  (A-1)R(OH)  (A-2)

Resist material and patterning process

The present invention is a resist material containing: (i) a metal compound shown by the following general formula (M-1) and (ii) an organic solvent. An object of the present invention is to provide a metal-containing resist material having high sensitivity and high resolution particularly in EUV and electron beam lithography; and a patterning process using this material.

A material for forming an organic film, including: a compound for forming an organic film shown by the following general formula (1A); and an organic solvent, where Wrepresents a tetravalent organic group, n1 an integer of 0 or 1, n2 an integer of 1 to 3, and Ran alkynyl group having 2 to 10 carbon atoms. A compound for forming an organic film is cured not only under air, but also under film formation conditions of inert gas, and forms an organic film having not only excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but also favorable adhesion to a substrate, and a material for forming an organic film containing the compound, and a substrate for manufacturing a semiconductor device using the material, a method for forming an organic film using the material, and a patterning process using the material.

Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

A material for forming an organic film, including: a polymer having a structure shown by the following general formula (1A) as a partial structure; and an organic solvent, where in the general formula (1A), W1 represents a tetravalent organic group, W2 represents a single bond or a linking group shown by the following formula (1B), R1 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, n1 represents an integer of 0 or 1, and n2 and n3 satisfy 0≤n2≤6,0≤n3≤6, and 1≤n2+n3≤6, and where R2 and R3 each independently represent hydrogen or an organic group having 1 to 30 carbon atoms, and the organic group R2 and the organic group R3 optionally bond to each other within a molecule to form a cyclic organic group.

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent, noting that in the general formula (1A), when Wrepresents any of Rdoes not represent any of

A material for forming an organic film using a polymer including an imide group for forming an organic underlayer film that cures under film-forming conditions in the air and in an inert gas, generates no by-product in heat resistance and embedding and flattening characteristics of a pattern formed on a substrate, also adhesiveness to a substrate for manufacturing a semiconductor apparatus, a method for forming an organic film, and a patterning process. The material includes (A) a polymer having a repeating unit represented by the following general formula (1A) whose terminal group is a group represented by either of the following general formulae (1B) or (1C), and (B) an organic solvent: wherein, Wrepresents a tetravalent organic group, and Wrepresents a divalent organic group: wherein, Rrepresents any of the groups represented by the following formula (1D), and two or more of Rs may be used in combination. 

Material for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1) as a repeating unit, and an organic solvent. Each of AR1 and AR2 represents a benzene ring or naphthalene ring which optionally have a substituent; Wrepresents a particular partial structure having a triple bond, and the polymer optionally contains two or more kinds of W; and Wrepresents a divalent organic group having 6 to 80 carbon atoms and at least one aromatic ring. This invention provides: a polymer curable even under film formation conditions in an inert gas and capable of forming an organic film which has not only excellent heat resistance and properties of filling and planarizing a pattern formed in a substrate, but also favorable film formability onto a substrate with less sublimation product; and a composition for forming an organic film, containing the polymer. 

Composition for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and polymer

A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure. 

Resist composition and patterning process

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent,   

A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where Rrepresents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R, Reach represent the Ror a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning process

A compound including two or more partial structures shown by the following general formula (1-1) in the molecule,  wherein each Ar independently represents an aromatic ring optionally having a substituent or an aromatic ring that contains at least one nitrogen atom optionally having a substituent, and two Ars are optionally bonded with each other to form a ring structure; the broken line represents a bond with an organic group; B represents an anionic leaving group that is capable of forming a reactive cation due to effect of either or both of heat and acid. This provides a compound that is capable of curing under the film forming conditions in air or an inert gas without forming byproducts, and forming an organic under layer film that has good dry etching durability during substrate processing not only excellent characteristics of gap filling and planarizing a pattern formed on a substrate.

Compound, composition for forming organic film, substrate for manufacturing semiconductor apparatus, method for forming organic film, and patterning process

The invention provides: a dihydroxynaphthalene condensate which suppresses soft particle generation and is suitably usable for a composition excellent in filterability; and a method for producing the dihydroxynaphthalene condensate. In the method for producing a dihydroxynaphthalene condensate, dihydroxynaphthalene to be used has a sulfur element content of 100 ppm or less in terms of mass among constituent elements. The dihydroxynaphthalene and a condensation agent are condensed in presence of an acid or a base to produce the dihydroxynaphthalene condensate.

Method for producing dihydroxynaphthalene condensate and dihydroxynaphthalene condensate

The present invention provides a composition for forming an organic film, containing a polymer compound having one or more of repeating units shown by the general formulae (1) to (4) and an organic solvent containing one or more compounds selected from propylene glycol esters, ketones, and lactones, with a total concentration of more than 30 wt % with respect to the whole organic solvent. There can be provided a composition capable of forming an organic film that can be easily removed, together with a silicon residue modified by dry etching, in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process. 

Composition for forming organic film

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Joetsu, Japan

Seiichiro Tachibana