Hitachi, Ltd.

Nitto-denko Corporation

Hitachi Vlsi Engineering Corp.

Renesas Electronics Corporation

Seiichiro Shirai

Fumio Mizuno

Noboru Moriuchi

Masayuki Morita

Norio Hasegawa

Yutaka Moroishi

Makoto Sunakawa

Michirou Kawanishi

Toshihiko Tanaka

Hiroshi Fukuda

Tsuneo Terasawa

Eiji Toyoda

Katsuya Hayano

Takumi Ueno

Hiroshi Shiraishi

Makoto Namikawa

Michiaki Hashimoto

Takao Iwayanagi

Shinroku Maejima

Kouichi Hashimoto

Kazuya Kadota

Takahiro Machida

Noburu Moriuchi

An exposure apparatus includes a light emission partgenerating EUV light by plasma excitation of a predetermined atom, a condenser partcondensing the EUV light emitted from the light emission part, an exposure partirradiating a substrate via a mask with the EUV light condensed by the condenser part, a first plasma position monitordetecting the position of an emission point of the EUV light within the light emission part, and a light emission part drive unitadjusting the position of the light emission part. The exposure apparatus determines a first shift amount between the emission point detected by the plasma position monitor and a reference light emission position, and drives the light emission part drive unit according to the first shift amount.

Manufacturing method of semiconductor device, exposure method, and exposure apparatus

A method of manufacturing a semiconductor device answerable to refinement of circuits by correctly connecting adjacent small patterns with each other with excellent reproducibility in connective exposure and a semiconductor device manufactured by this method are proposed. According to this method of manufacturing a semiconductor device, connective exposure is performed by dividing a pattern formed on a semiconductor substrate into a plurality of patterns and exposing the plurality of divided patterns in a connective manner, by forming marks for adjusting arrangement of the patterns to be connected with each other on the semiconductor substrate before exposing patterns of a semiconductor element and connectively exposing the patterns of the semiconductor element in coincidence with the marks for adjusting arrangement.

Method of manufacturing semiconductor device, mask and semiconductor device

The present invention is intended to collectively remove unnecessary resist material and side wall protective film after dry etching by side wall protection process, making it possible to simplify the process for the preparation of semiconductors, etc. The process according to the present invention comprises removing unnecessary resist material ( ) left behind after dry etching by side wall protection process with a resist pattern ( ) present on a semiconductor substrate ( ) as a mask and side wall protective film ( ) deposited on the side wall ( ) of pattern, said process comprising the steps of applying an pressure-sensitive adhesive sheet ( ) to said substrate ( ), heating the pressure-sensitive adhesive layer ( ) under pressure so that the pressure-sensitive adhesive ( ) comes in contact with up to the side wall ( ) of pattern, and then collectively peeling said pressure-sensitive adhesive sheet ( ), said resist material ( ) and said side wall protective film ( ) off said substrate.

Process for the collective removal of resist material and side wall protective film

Method for measuring aberration of projection lens, method for forming patterns, mask, and method for correcting a projection lens

A method for removing a resist pattern formed on a semiconductor wafer, and a curable pressure-sensitive adhesive, adhesive sheets and an apparatus used for the method. The resist-removing method comprising adhering an adhesive tape on an upper surface of a resist pattern formed on an article and peeling off the resist pattern together with the adhesive tape; the curable pressure-sensitive adhesive constituting the adhesive tape, comprising a pressure-sensitive adhesive polymer containing a non-volatile compound having at least one unsaturated double bond in the molecule and having a good affinity with a resist material to be removed; the adhesive sheet comprising a film substrate having formed thereon the curable pressure-sensitive adhesive; and the resist-removing apparatus comprising a means for press-adhering the adhesive tape, a tape-peeling means, and a substrate-washing means.

Resist removing method, and curable pressure-sensitive adhesive,

One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.

Manufacturing method or an exposing method for a semiconductor device or

Manufacturing method or an exposing method for a semiconductor device

The present invention enables the accuracy of aligning a wafer and a reticle with each other in the exposure step in the manufacture of a semiconductor integrated circuit device to be improved. The portions of a metal film 5 and a resist film 6 which cover an alignment mark 4 on a wafer 1 are removed by a gas assisted etching treatment using a laser beam prior to the execution of an exposure treatment, so as to bare the alignment mark 4. The position detecting light is then applied from an alignment mark position detecting means in a reduction projection exposure unit 11 to the alignment mark 4, the position of the alignment mark 4 being detected on the basis of the light reflected on and scattered from the alignment mark 4.

Alignment method and apparatus

A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.

Resist pattern forming process with dry etching

Growing community of inventors

Tokyo, Japan

Seiichiro Shirai