Canon Kabushiki Kaisha

Seiichiro Sakai

Masanori Ogura

Hiroki Hiyama

Toru Koizumi

Takanori Watanabe

Akira Okita

Fumihiro Inui

An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes, plural transfer MOSFETs arranged corresponding to the plural photodiodes, respectively, and a common MOSFET which amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Imaging device and imaging system

An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes with plural transfer MOSFETs arranged respectively corresponding to the plural photodiodes, and a common MOSFET that amplifies and outputs signals read from the plural photodiodes. The unit cell includes reset and selecting MOSFETs. Within the unit cell, each pair of photodiode and corresponding transfer MOSFET has translational symmetry with respect to one another.

An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

Image pickup device

An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodesA andB, plural transfer MOSFETsA andB arranged corresponding to the plural photodiodes, respectively, and a common MOSFETwhich amplifies and outputs signals read from the plural photodiodes. Each pair within the unit cell, composed of the photodiode and the transfer MOSFET provided corresponding to the photodiode, has translational symmetry with respect to one another. Within the unit cell, there are included a reset MOSFET and selecting MOSFET.

Unit cells each having a plurality of photodiodesand, a plurality of transfer MOSFETsandprovided in correspondence to the plurality of photodiodes, respectively and a common amplifying MOSFETfor amplifying and outputting signals read out from the plurality of diodes are arranged two-dimensionally, and, plural photodiodes are disposed around the photodiodeand trapping regionsandare for trapping excessive carriers from the photodiodeare provided between the photodiodeand the plural photodiodes, respectively.

Image pickup device and image pickup system

The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.

To provide a solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation. A wellis formed on a wafer, and semiconductor layersare formed in the well to constitute photodiodes. A well contactis formed between the semiconductor layers. Element isolation regionsare provided between the well contact and the semiconductor layers, and channel stop layersare provided under the element isolation regions. A conductive layeris provided on the element isolation region, and a side wallis provided on a side face of the conductive layer. A distance a between an end of the element isolation regionand the conductive layer, a width b of the side walland a device isolation width c satisfy a relation c&#x3e;a&#x2267;b.

Image pickup apparatus and image pickup system

A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region.

Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring

A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements and providing a high sensitivity and a low dark current even in a high-speed readout operation. A wellis formed on a wafer, and semiconductor layersare formed in the well to constitute photodiodes. A well contactis formed between the semiconductor layers. Element isolation regionsare provided between the well contact and the semiconductor layers, and channel stop layersare provided under the element isolation regions. A conductive layeris provided on the element isolation region, and a side wallis provided on a side face of the conductive layer. A distance a between an end of the element isolation regionand the conductive layer, a width b of the side walland a device isolation width c satisfy a relation c&#x3e;a&#x2267;b.

Image pickup apparatus and image pickup system having plural semiconductor regions of a same conductivity type, with one of the semiconductor regions having a higher impurity concentration than and providing a potential to another of the semiconductor regions

The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.

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Zama, Japan

Seiichiro Sakai