Dainippon Screen Mfg. Co., Ltd.

Seiichiro Okuda

Hiroaki Sugimoto

Takuya Kuroda

Masanobu Sato

Shuichi Yasuda

Kenya Morinishi

Sadao Hirae

Masayoshi Imai

Kenji Sugimoto

Tsuyoshi Mitsuhashi

Akio Hashizume

Katsushi Yoshioka

Hiroshi Yoshii

The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Substrate processing apparatus

A substrate processing apparatus includes a container in which a heating plate, a discharge nozzle for discharging a vapor of organic solvent, and a discharge nozzle for supplying a process gas and a cooling gas are provided. A pump in communication with an exhaust outlet of the container exhausts an atmosphere from the container to reduce pressure in the container. Therefore, the substrate processing apparatus is capable of performing (1) the process of drying a substrate in a reduced-pressure atmosphere by the use of the vapor of organic solvent, and (2) the process of drying the substrate in the reduced-pressure atmosphere by heating, to thereby efficiently dry the substrate.

Substrate processing apparatus for drying substrate

A removal liquid is supplied to a substrate on which a thin film formed is patterned by dry etching using a resist film as a mask, and cleaning is made with de-ionized water, thereby removing a reaction product generated on the surface of the substrate. After that, the processed substrate is heated, thereby completely drying the substrate from which the reaction product has been eliminated.

A substrate developing method and apparatus for improving uniformity of a developing process by adjusting a temperature gradient of a developer spread over the surface of a substrate. The developer is delivered to a central region of the substrate surface and spread over the surface. The developer in this state has activity diminishing, and thereby lowering the developing rate, gradually from center to edge of the substrate. With a gas flowing down around the edge of the substrate during the developing process, the developer vaporizes from peripheral regions of the substrate at an increased rate, thereby lowering the developer temperature in the peripheral regions. This increases the developing rate gradually from edge to center of the substrate. The uniformity of the developing process is improved by balancing the gradient of developing rate due to the temperature variation of the developer against the gradient of developing rate due to the lowering of developer activity.

Substrate developing method and apparatus

A baffle is placed in a position opposed to discharge openings of a treating solution supply nozzle and between the discharge openings and the surface of a substrate. The baffle intercepts a treating solution discharged from the discharge openings, whereby the treating solution is supplied evenly to the surface of the substrate by flowing over a surface of the baffle and falling from an edge of the baffle to the substrate, instead of falling from the discharge openings directly to the substrate. No microbubbles are formed in the treating solution on the substrate, which would cause an unevenness of treatment. The discharge openings may be defined by a plurality of circular bores formed in the supply nozzle. Each circular bore may have a diameter at least equal to a spacing between an adjacent pair of circular bores.

Substrate spin treating method and apparatus

A substrate spin coating apparatus for forming a coating film on the upper surface of a spinning substrate includes a spin chuck for supporting and spinning the substrate while holding same substantially in horizontal posture. A scatter preventive cup surrounds lateral and lower regions of the spin chuck, and defines an opening in an upper central region thereof for allowing entry of air flows. An exhaust vent is provided for downwardly exhausting the air flows, and a nozzle is provided for supplying a coating solution through the opening of the scatter preventive cup to the upper surface of the substrate. The scatter preventive cup includes an air passage formed in a bottom region thereof and opening toward a lower surface of the substrate. An air flow adjusting unit is connected to the air passage for adjusting an air flow to a predetermined temperature and supplying the adjusted air flow to the air passage.

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Kyoto, Japan

Seiichiro Okuda