Shin-etsu Handotai Co., Ltd.

Seiichiro Ohtsuka

Michiaki Oda

Isamu Harada

Koji Mizuishi

Naoki Nagai

Yasushi Nakamura

Fumio Yamada

Masahiko Urano

Yoshihiro Hirano

Masahiko Baba

Hidetoshi Seki

Atsushi Shiozawa

Masahiro Mashimo

Tooru Ohara

Eizi Namiki

A recharger system including a feeder and a feed conduit recharge polycrystalline silicon granules into a crucible after a run or operation of growing a single crystal silicon rod by the Czochralski method, thereby to prepare for a next run of crystal growing. The amount of holdup or backed-up supply of the silicon granules in the feed conduit is detected by a sensor provided on the feed conduit. A smooth and high-rate feed of the silicon granules is ensured by controlling the feed rate of the silicon granules from the feeder to the feed conduit and/or a descending velocity of the crucible by signals generated in the sensor as a function of the amount of the holdup or backed-up supply in the feed conduit.

Apparatus for recharging of silicon granules in a czochralski single

Method for recharging of silicon granules in a Czochralski single

A method for controlling a specific resistance of a single crystal in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up from a polycrystal melt and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the passage of pulling time.

Method for controlling specific resistance of single crystal and an

An apparatus for producing a single crystal grown by Czochralski method includes a winding drum disposed in a case for winding up and down a flexible pull wire, a power transmission mechanism for driving the winding drum, and a bearing unit for rotatably supporting the winding drum. The power transmission mechanism and the bearing unit are disposed outside the case and isolated from the furnace atmosphere surrounding the winding drum and the pull wire in the case. With this construction, metallic dust produced by abrasion from the power transmission mechanism and the bearing unit has no influence on the condition of the furnace atmosphere and hence the quality of a single crystal being pulled upwardly by the pull wire.

Apparatus for producing Czochralski-grown single crystals

A single crystal pulling apparatus having a wire which is used to pull a crystal is provided with a novel wire vibration prevention mechanism. The wire vibration prevention mechanism includes wire restriction devices which restrict the movement of the wire to movement in the vertical direction. The wire restriction devices may be mechanically driven in the horizontal direction in order to center the pulled crystal. The wire restriction devices are driven by pneumatic air cylinders. Use of the wire vibration prevention mechanism avoids the formation of deformed growth of the pulled crystal and thus reduces the occurrence of dislocations in the pulled crystal.

Wire vibration prevention mechanism for a single crystal pulling

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Tomioka, Japan

Seiichiro Ohtsuka