Hamamatsu-Photonics K.k.

Kyoto University

Hamamatsu Photonics Kabushiki Kaisha

J. Morita Manufacturing Corporation

Toyohashi University of Technology

Seiichiro Mizuno

Yukinobu Sugiyama

Hiroo Yamamoto

Yasuhiro Suzuki

Takashi Suzuki

Haruhiro Funakoshi

Kazuki Fujita

Haruyoshi Toyoda

Toshiki Wakamori

Mitsuhito Mase

Sho Morita

Tetsuya Taka

Mitsutaka Takemura

Naohisa Mukozaka

Masaki Mizoguchi

Harumichi Mori

Takayuki Suzuki

Mikio Kyomasu

Masatoshi Ishihara

Mitsuaki Kageyama

Hiroo Yamakawa

Katsumi Shibayama

Masakazu Suzuki

Kazuhiro Nakamura

Ryuji Kyushima

Kazunari Matoba

Koei Yamamoto

Yoshimaro Fujii

Kazuaki Sawada

Akifumi Tachibana

Keisuke Mori

Masahiko Honda

Munenori Takumi

Helmut Teichmann

Yoshinori Matsui

Dietmar Hiller

Ulrich Starker

Naohisa Mukohzaka

Tatsumi Yamanaka

Kenji Makino

Toshiyuki Izawa

Yoshitaka Terada

Keiji Abe

Hideo Takahashi

Izumi Adachi

Makoto Kobayashi

Hitoshi Inoue

Akira Kurahashi

Hitoshi Tanaka

Takumi Ikenoue

Yuki Haruta

Masao Miyake

Tetsuji Hirato

A smell sensor includes an ion sensor having a sensitive film, a substance adsorption film disposed on the sensitive film and configured to adsorb a smell substance to be detected, and an electrode configured to apply a reference voltage to the substance adsorption film. The substance adsorption film is in a state of releasing a proton in response to absorbing the smell substance.

Odor sensor and odor sensing method

An ion detection device includes an ion sensor having a sensitive film immersed in an aqueous solution and outputting an output signal in accordance with a potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

Ion detection device and ion detection method

A radiation detector includes a substrate including a first electrode portion, a radiation absorption layer disposed on one side with respect to the substrate and configured of a plurality of perovskite crystals, and a second electrode portion disposed on the one side with respect to the radiation absorption layer and being opposite to the first electrode portion with the radiation absorption layer interposed therebetween. Each of the plurality of perovskite crystals is formed to extend with a first direction in which the first electrode portion and the second electrode portion are opposite to each other as a longitudinal direction in a region between the first electrode portion and the second electrode portion in the radiation absorption layer.

Radiation detector and method for manufacturing radiation detector

A smell detection device includes an ion sensor having a sensitive film and outputting an output signal in accordance with a potential change of the sensitive film, a substance adsorption film disposed on the sensitive film and changing its state by adsorbing a smell substance to be detected to cause the potential change of the sensitive film, and an adjuster acquiring the output signal of the ion sensor and adjusting a drive signal for driving the ion sensor to reduce an offset from a predetermined reference value in the output signal.

Smell detection device and smell detection method

An ion concentration distribution measurement device includes a unit detection element for outputting charges of an amount according to an ion concentration, and an integration circuit for outputting a signal value according to the amount of charges which are output from the unit detection element. The unit detection element includes a MOS transistor, an ion sensitive portion, a first capacitive portion, and a transfer switch. The integration circuit includes an amplifier, a second capacitive portion, and a reset switch.

Ion concentration distribution measuring device

In a signal processing device of an embodiment, an integration circuit accumulates a charge from a photodiode in an integrating capacitor element, and outputs a voltage value according to the amount of charge. A comparator circuit, when the voltage value from the integration circuit has reached a reference value, outputs a saturation signal. A charge injection circuit, in response to the saturation signal, injects an opposite polarity of charge into the integrating capacitor element. A counter circuit performs counting based on the saturation signal. A holding circuit holds the voltage value from the integration circuit. An amplifier circuit outputs a voltage value that is K times (where K&#x3e;1) larger than the voltage value held by the holding circuit. An A/D converter circuit sets a voltage value that is K times larger than the reference value as the maximum input voltage value, that is, a full-scale value, and outputs a digital value corresponding to the voltage value from the amplifier circuit.

Signal processing device, including charge injection circuit, and photodetection device

A pair of first gate electrodes IGR, IGL are provided on a semiconductor substrateso that potentials &#x3c6;, &#x3c6;between a light-sensitive area SA and a pair of first accumulation regions AR, AL alternately ramp. A pair of second gate electrodes IGR, IGL are provided on the semiconductor substrateso as to control the height of first potential barriers &#x3c6;each interposed between the first accumulation region AR, AL and a second accumulation region FDR, FDL, and increase the height of the first potential barrier &#x3c6;to carriers as a higher output of a background light is detected by a photodetector.

Solid state imaging device and distance image measurement device

Two charge quantities (Q,Q) are output from respective pixels P (m,n) of the back-illuminated distance measuring sensoras signals d'(m,n) having the distance information. Since the respective pixels P (m,n) output signals d&#x2032;(m,n) responsive to the distance to an object H as micro distance measuring sensors, a distance image of the object can be obtained as an aggregate of distance information to respective points on the object H if reflection light from the object H is imaged on the pickup areaB. If carriers generated at a deep portion in the semiconductor in response to incidence of near-infrared light for projection are led in a potential well provided in the vicinity of the carrier-generated position opposed to the light incident surface side, high-speed and accurate distance measurement is enabled.

Back-illuminated distance measuring sensor and distance measuring device

A solid-state imaging deviceincludes photodiodes PDto PD, charge-voltage converting circuitsto, pre-holding circuitsto, a transimpedance amplifier, a peak holding circuit, and a post-holding circuit. The charge-voltage converting circuitinputs charges generated at the photodiode PDand outputs a voltage value corresponding to the input charge quantity. The pre-holding circuitholds the output voltage value from the charge-voltage converting circuitand outputs the output voltage value as a current. The transimpedance amplifierinputs voltage values successively output form the pre-holding circuitstoas currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuitholds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier

Solid-state imaging device having transimpedance amplifier

A solid-state imaging deviceincludes N pixel sectionsto, transimpedance circuitsand, integrating circuitsand, and a difference arithmetic circuit. Each pixel sectionincludes a photoelectric converting circuit including a photodiode, and a first holding circuit and a second holding circuit which hold an output voltage of the photoelectric converting circuit. A voltage held by the first holding circuit of each pixel sectionis input into the difference arithmetic circuitthrough a common wire, the transimpedance circuit, and the integrating circuit. A voltage held by the second holding circuit of each pixel sectionis input into the difference arithmetic circuitthrough a common wire, the transimpedance circuit, and the integrating circuit. A voltage corresponding to a difference between the voltages output from the integrating circuitsand, respectively, is output from the difference arithmetic circuit

Solid-state imaging device with transimpedance and integrating circuits

The present invention relates to a sensor apparatus having a structure capable of obtaining digital values of signal components with a high accuracy using an A/D conversing circuit with the outputted digital value thereof having a small number of expressive bits. In the sensor apparatus, a voltage value corresponding to the amount of incident light to a photodiode is held by a holding circuit through an integrating circuit and a CDS circuit. Meanwhile, a voltage value corresponding to the amount of incident light to an adjacent photodiode is held by another holding circuit through an integrating circuit and a CDS circuit. The voltage values held by the respective different holding circuits are inputted to a subtracting circuit through different paths. The subtracting circuit outputs a voltage value corresponding to the difference between the two inputted voltage values. In an A/D converting section, the difference voltage outputted from the subtracting circuit is converted into a digital value.

Sensor apparatus

A determination unitdetermines whether there is incident light, based on an output value from an integrating circuit, and generates a determinated signal indicating a determinated result. A control unitcontrols charge accumulating portions of an imaging light-receiving unitwhether or not to start accumulation of an electric charge, based on the determinated signal, and changes a charge accumulation capacitance value of the integrating circuitof an output unit. Specifically, the control unitvaries the capacitance value for accumulation of an electric charge generated in a trigger light-receiving unit, depending upon the detection result on the presence/absence of incident light, to switch the sensitivity of the integrating circuitto the trigger PD, thereby enabling optimal utilization of the trigger PD.

Solid-state imaging device including imaging photodetecting arrangement and trigger photodetecting arrangement and imaging method

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Hamamatsu, Japan

Seiichiro Mizuno