Hitachi-high-technologies Corporation

Hitachi, Ltd.

Hitachi High-tech Corporation

Hitachi High-technologies Corpoartion

Seiichiro Kanno

Go Miya

Ken Yoshioka

Ryoji Nishio

Hiroyuki Kitsunai

Saburo Kanai

Saburou Kanai

Masaru Matsushima

Hideyuki Yamamoto

Youichi Itou

Hideki Kihara

Junichi Tanaka

Takafumi Miwa

Yasushi Ebizuka

Toru Shuto

Tatehito Usui

Masashi Fujita

Motohiko Yoshigai

Naoshi Itabashi

Tsutomu Tetsuka

Naoya Ishigaki

Akito Tanokuchi

Koji Okuda

Kei Shibayama

Shuichi Nakagawa

Hironobu Kawahara

Kazuyuki Ikenaga

Masakazu Takahashi

Ken'etsu Yokogawa

Takumi Tandou

Mitsuru Suehiro

Makoto Nishihara

Kazue Takahasi

Hiroyuki Andou

Tsunehiko Tsubone

Masaru Izawa

Masahito Mori

Toshio Masuda

Kazue Takahashi

Akira Kagoshima

Naoyuki Kofuji

Go Saito

Kumiko Shimizu

Kazuma Tanii

Masaya Yasukochi

A charged particle beam device suppresses sample deformation caused by placing a sample on a suctioning surface of an electrostatic chuck mechanism, the sample having a temperature different from the suctioning surface. The charged particle beam device includes the electrostatic chuck mechanism; a stage which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam; an insulating body which is disposed on the stage and constitutes a dielectric layer of the electrostatic chuck; a first support member which supports the insulating body on the stage; a ring-shaped electrode which encloses the surroundings of the sample and is installed on the insulating body in a contactless manner, and to which a predetermined voltage is applied; and a second support member which supports the ring-shaped electrode.

Charged particle beam device

Provided is a charged particle beam device capable of reducing scattering of a foreign substance collected by a foreign substance collecting unit. The charged particle beam device includes: a sample chamber in which a sample is to be disposed; and a charged particle beam source configured to irradiate the sample with a charged particle beam. The charged particle beam device further includes: a foreign substance attachment/detachment unit from or to which a foreign substance is to detach or attach; and a foreign substance collecting unit provided in the sample chamber and configured to collect a foreign substance dropped from the foreign substance attachment/detachment unit. An opening through which the foreign substance passes is provided in an upper end portion of the foreign substance collecting unit. An area of the opening is smaller than a horizontal cross-sectional area of an internal space of the foreign substance collecting unit.

A charged particle beam device suppresses sample deformation caused by placing a sample on a suctioning surface of an electrostatic chuck mechanism, the sample having a temperature different from the suctioning surface. The charged particle beam device includes the electrostatic chuck mechanism; a stage () which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam; an insulating body () which is disposed on the stage and constitutes a dielectric layer of the electrostatic chuck; a first support member () which supports the insulating body on the stage; a ring-shaped electrode () which encloses the surroundings of the sample and is installed on the insulating body in a contactless manner, and to which a predetermined voltage is applied; and a second support member () which supports the ring-shaped electrode.

Provided is a charged particle beam apparatus capable of analyzing foreign matters generated when a sample is transported or observed. The charged particle beam apparatus includes a sample stage on which a measurement sample is provided, a charged particle beam source that irradiates the measurement sample with a charged particle beam, and a detector that detects charged particles emitted by irradiation with the charged particle beam, and includes a foreign matter observation sample held on the sample stage together with the measurement sample and a foreign matter observation unit that causes a foreign matter to be observed on the foreign matter observation sample.

Charged particle beam apparatus

The purpose of the present invention is to provide a charged particle beam device which suppresses sample deformation caused by placing a sample on a suctioning surface of an electrostatic chuck mechanism, the sample having a temperature different from the suctioning surface. Proposed is a charged particle beam device which has an electrostatic chuck mechanism, the charged particle beam device being provided with: a stage () which moves a sample, which is to be irradiated with a charged particle beam, relative to an irradiation position of the charged particle beam; an insulating body () which is disposed on the stage and constitutes a dielectric layer of the electrostatic chuck; a first support member () which supports the insulating body on the stage; a ring-shaped electrode () which encloses the surroundings of the sample and is installed on the insulating body in a contactless manner, and to which a predetermined voltage is applied; and a second support member () which supports the ring-shaped electrode.

A charged-particle beam device wherein suppressing the effects of static build-up is compatible with executing high-throughput measurements and examination. The charged-particle beam device equipped with an electrostatic chuck (), includes an electrometer () for measuring the electric potential of the electrostatic chuck, a charge removing device () for removing charge from the electrostatic chuck, and a control device () for controlling the charge removing device in such a manner that the charge removal by the charge removing device is executed after reaching a certain number of processed samples irradiated by the charged particle beam, or after a predetermined processing time. When the result of the electric potential measurement by the electrometer does not meet a predetermined condition, the control device executes at least one among increasing and decreasing the number processed or the processing time.

Charged-particle beam device

A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.

The objective of the present invention is to provide a charged-particle beam device wherein suppressing the effects of static build-up is compatible with executing high-throughput measurements and examination. In order to achieve this objective, proposed is the charged-particle beam device equipped with an electrostatic chuck (), comprising an electrometer () for measuring the electric potential of the electrostatic chuck, a charge removing device () for removing charge from the electrostatic chuck, and a control device () for controlling the charge removing device in such a manner that the charge removal by the charge removing device is executed after reaching a certain number of processed samples irradiated by the charged particle beam, or after a predetermined processing time. When the result of the electric potential measurement by the electrometer does not meet a predetermined condition, the control device executes at least one among increasing and decreasing the number processed or the processing time.

In a charged particle beam apparatus that applies a retarding voltage to a sample through a contact terminal and executes measurement or inspection of a surface of the sample, potential variation of the sample when changing the retarding voltage applied to the contact terminal is measured by a surface potential meter, a time constant of the potential variation of the sample is obtained, and it is determined whether execution of measurement or inspection by a charged particle beam continues or stops based on the time constant, or a conduction ensuring process between the sample and the contact terminal is executed.

Charged particle beam apparatus for measuring surface potential of a sample

In order to prevent a sample from thermally expanding and contracting when the sample is placed on a sample stage inside a vacuum chamber, the related art has proposed a coping method of awaiting observation by setting a standby time from when the wafer is conveyed into the vacuum chamber until the wafer and the sample table are brought into thermal equilibrium. In addition, the coping method is configured so as to await the observation until the wafer is cooled down to room temperature when the wafer is heated in the previous step. Consequently, throughput of an apparatus decreases. A temperature control mechanism which can control temperature of the sample is installed inside a mini-environment device. The sample temperature control mechanism controls the temperature of the sample inside the mini-environment device so as to become a setting temperature which is set in view of a lowered temperature of the sample inside a load lock chamber.

Apparatus and method for processing sample, and charged particle radiation apparatus

The present invention provides a high-throughput scanning electron microscope in which a wafer () is held by an electrostatic chuck (), an image is obtained using an electron beam, and the wafer surface is measured, wherein even in a case where the temperature of the wafer () is changed due to the environmental temperature the electron scanning microscope is capable of preventing any loss in resolution or the deterioration of the measurement reproducibility caused by thermal shrinkage accompanied by temperature change of the wafer (). A drill hole is provided on the rear surface of the electrostatic chuck (), and a thermometer () is secured in place so that the front end is brought into elastic contact with the bottom surface of the drill hole. The output of the thermometer () is sent to a computing unit, the computing unit computes a measurement limit time for beginning measurement, based on a predetermined algorithm, from an output value of the thermometer (), and measuring begins at individual measurement sites after the measurement limit time has elapsed.

Charged particle radiation apparatus

The present invention explains a charged-particle beam device for the purpose of highly accurately measuring electrostatic charge of a sample in a held state by an electrostatic chuck (). In order to attain the object, according to the present invention, there is proposed a charged-particle beam device including an electrostatic chuck () for holding a sample on which a charged particle beam is irradiated and a sample chamber () in which the electrostatic chuck () is set. The charged-particle beam device includes a potential measuring device that measures potential on a side of an attraction surface for the sample of the electrostatic chuck () and a control device that performs potential measurement by the potential measuring device in a state in which the sample is attracted by the electrostatic chuck ().

Charged-particle beam device for irradiating a charged particle beam on a sample

Proposed are an electrostatic chuck mechanism and a charged particle beam apparatus including a first plane that is a plane of a side in which a sample is adsorbed, a first electrode to which a voltage for generating an adsorptive power between the first plane and the sample is applied, and a second electrode that is arranged in a position relatively separated from the sample toward the first plane and through which a virtual line that is perpendicular to the first plane and contacts an edge of the sample passes, wherein the first plane is formed so that a size in a plane direction of the first plane is smaller than that of the sample.

Electrostatic chuck mechanism and charged particle beam apparatus

An object of the present invention is to provide a charged particle beam apparatus that effectively removes electrical charges from an electrostatic chuck. In order to achieve the above object, the charged particle beam apparatus of the present invention includes a sample chamber that maintains a space containing an electrostatic chuck mechanism () in a vacuum state; and in which the charged particle beam apparatus includes an ultraviolet light source () to irradiate ultraviolet light within the sample chamber, and a irradiation target member irradiated by the ultraviolet light; and the irradiation target member is placed perpendicular to the adsorption surface of the electrostatic chuck.

In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

Growing community of inventors

Iwaki, Japan

Seiichiro Kanno