Kyocera Corporation

Seiichiro Inai

Yoshihide Okawa

Isamu Tanaka

Shuji Nakazawa

Sentaro Yamamoto

Shuichi Kasai

Seiji Oguri

Rui Kamada

Shintaro Kubo

Hiromitsu Ogawa

Shinnosuke Ushio

Daisuke Nishimura

Masashi Saito

Koichiro Yamada

According to the present disclosure, a photoelectric conversion film includes a plurality of semiconductor nanoparticles and a matrix phase provided around each of the plurality of semiconductor nanoparticles. The matrix phase includes a principal phase including a composite, which includes an organic molecule polymer and an inorganic material. A photoelectric conversion device includes a transparent electrically conductive film, a photoelectric conversion layer, a semiconductor substrate, and an electrode layer, which are layered on a glass substrate in this order. The photoelectric conversion layer includes the photoelectric conversion film.

Photoelectric conversion film and photoelectric conversion device

A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Method for producing compound semiconductor, method for manufacturing photoelectric conversion device, and solution for forming semiconductor

It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer.

Photoelectric conversion device

The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Production method of photoelectric conversion device and solution for forming semiconductor

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Higashiomi, Japan

Seiichiro Inai