Hiroshima University

Seiichiro Higashi

Seiichi Miyazaki

Katsunori Makihara

Hideki Murakami

Yoshitaka Kobayashi

Naohiro Koba

Muneki Akazawa

Kohei Sakaike

Shogo Nakamura

The present invention provides a thin film forming method. The method includes the steps of: providing a first substrate, of which a surface is covered with a thin film; forming a plurality of openings through the thin film; forming a hollow portion between the first substrate and the thin film by etching the first substrate through the openings; bringing the thin film into contact with a second substrate with a liquid interposed between the thin film and the second substrate; and heating the first substrate and/or the second substrate. In the step of heating, the liquid interposed between the thin film and the second substrate evaporates off, which results in that the thin film is separated from the first substrate and transferred onto the second substrate.

Thin film forming method, semiconductor substrate and electronic device produced by employing same

A crystal manufacturing apparatus capable of manufacturing a crystal in a desired position on a substrate is provided. A spring has one end fixed to a mount and the other end coupled to a magnetic body. The magnetic body has one end coupled to the spring and the other end coupled to a piston. A coil is wound around the magnetic body and electrically connected between a power supply circuit and a ground node (GND). The piston has a linear member inserted in a cylinder. The cylinder has a hollow columnar shape and a small hole at a bottom surface. The cylinder holds a silicon melt. A substrate is supported by an XY stage to be opposed to the small hole of the cylinder. The power supply circuit passes pulse shaped current through the coil to move the piston in an up-down direction (DR). As a result, a droplet is discharged toward the substrate from the small hole at an initial speed of 1.02 m/s.

Crystal manufacturing apparatus, semiconductor device manufactured using the same, and method of manufacturing semiconductor device using the same

A semiconductor device has a floating gate structure in which charge storage layers are stacked on a SiOlayer formed on a substrate made of n-type Si. The charge storage layer has quantum dots made of undoped Si and an oxide layer that covers the quantum dots. The charge storage layer has quantum dots made of n-Si and an oxide layer that covers the quantum dots. Electrons originally existing in the quantum dots migrate between the quantum dots and the quantum dots via tunnel junction and are distributed in the quantum dots and/or the quantum dots according to the voltage applied to a gate electrode via pads. The distribution is detected in the form of a current (I).

Semiconductor device

A temperature measuring apparatus and a temperature measuring method, comprising a light intensity measuring unit, a calculation unit, and a temperature output unit; wherein an object to be heated having a uniquely defined correlation between temperature and refractive index is irradiated with a probe laser beam in the light intensity measuring unit, and a light intensity property is determined which represents a relationship between time and light intensity of a reflected light or a transmitted light occurring as a result of interference of the multiply-reflected probe laser beam within the object to be heated. In the calculation unit, a virtual object to be heated having equivalent dimensional, thermal, and optical characteristics to those of the object to be heated is subjected to a thermal incidence equivalent to the heating conditions of the object to be heated. A light intensity property of the virtual object to be heated is irradiated with a probe laser beam having an equivalent property to said probe laser beam is acquired, and a virtual object to be heated having a light intensity property is obtained as a replicated object to be heated. The temperature output unit acquires temperature of the object to be heated at a predetermined position thereon at a predetermined time on the basis of the replicated object to be heated.

Temperature measuring device, thermal treatment device using the same, temperature measuring method

A semiconductor memory includes a composite floating structure where an insulation film is formed on a semiconductor substrate, Si-based quantum dots covered with an extremely thin Si oxide film is formed on the insulation film, silicide quantum dots covered with a high dielectric insulation film are formed on the extremely thin Si oxide film, and Si-based quantum dots covered with a high dielectric insulation film are formed on the high dielectric insulation film. Multivalued memory operations can be conducted at a high speed and with stability by applying a certain positive voltage to a gate electrode to accumulate electrons in the silicide quantum dots and by applying a certain negative voltage and weak light to the gate electrode to emit the electrons from the silicide quantum dots.

Semiconductor memory, semiconductor memory system using the same, and method for producing quantum dots applied to semiconductor memory

A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.

Semiconductor memory, semiconductor memory system using the memory, and method for manufacturing quantum dot used in semiconductor memory

A measuring unit applies a dc voltage causing an inversion layer to be formed on an interface between a semiconductor substrate and an insulating film to the semiconductor substrate while changing a change speed of a level of the dc voltage, and measures a current flowing through the insulating film. An arithmetic unit obtains a straight line showing a relationship between the current flowing through the insulating film and the change speed of the dc voltage on the basis of a relationship between the current measured by the measuring unit and the dc voltage, and calculates a slope of the obtained straight line as surface capacitance of the insulating film. The arithmetic unit calculates permittivity of the insulating film on the basis of the calculated surface capacitance, an area of contact between a probe and the insulating film and a thickness of the insulating film.

Measuring apparatus and method for measuring a surface capacitance of an insulating film

A light-emitting device comprises first and second dot members. The first dot member is formed so that it makes contact with the second dot member. The first dot member comprises a plurality of first quantum dot layers. Each of the plurality of first quantum dot layers comprises a plurality of first quantum dots and a silicon dioxide film. The first quantum dot comprises an n-type silicon dot. The second dot member comprises a plurality of second quantum dot layers. Each of the plurality of second quantum dot layers comprises a plurality of second quantum dots and a silicon dioxide film. The second quantum dot comprises a p-type silicon dot.

Growing community of inventors

Higashihiroshima, Japan

Seiichiro Higashi