Seiko Epson Corporation

Seiichiro Higashi

Mitsutoshi Miyasaka

Satoshi Inoue

Yojiro Matsueda

Tokuroh Ozawa

Satoshi Takenaka

Daisuke Abe

Takashi Nakazawa

Kiyofumi Kitawada

Minoru Matsuo

Hiroyuki Ohshima

Using technology which uses a single shift register and simultaneously generates multiple pulses, this invention is a liquid crystal display device which rapidly drives data lines. It is possible to increase the frequency of the shift register output signal without changing the frequency of the shift register operation clock. If the shift register output signals, by means of analog switches, are used to determine the video signal sampling timing, high speed data line driving can be realized. Additionally, if the output signals of the shift register mentioned above are used to determine the video signal latch timing in a digital driver, high speed latching of the video signal can be realized. Consequently, even if the driving circuits of the liquid crystal display matrix are composed of TFTs, high speed operation of the driving circuits is possible without increasing power consumption. The shift register can also be used to inspect the electrical characteristics of the data lines and analog switches.

Liquid crystal display device, driving method for liquid crystal display devices, and inspection method for liquid crystal display devices

Liquid crystal display device, driving method for liquid crystal display devices, and inspection for liquid crystal display devices

A method for the fabrication of a field-effect transistor wherein after forming a semiconductor layer serving as an active layer on a substrate, the substrate temperature is set at no higher than 100&#xb0; C., a gate insulating film is formed on the semiconductor layer. Then, the gate insulating film is heat treated in an atmosphere containing water. By heat treating in the atmosphere containing water, OH bonds in the vicinity of the insulating film interface are reduced and, therefore, the CV characteristic thereof is improved.

Method for fabrication of field-effect transistor to reduce defects at MOS interfaces formed at low temperature

Active matrix substrate, method of producing an active matrix substrate,

Liquid crystal display device, driving method for liquid crystal display

Electronic devices are provided with electrically conductive interconnections which are formed on the insulator material. Such electronic devices include, for example, thin film semiconductor devices (TFT), metal-insulator-metallic type non-wiring elements (MIM), solar cells, Large Scale Integration devices (LSI) or printed-wiring boards. At least a part of the electrically conductive interconnections are made of .alpha.-structure tantalum (Ta) which contains hydrogen. The .alpha.-structure tantalum does not have cubical crystals in its crystal system, but rather has body-centered cubes (bcc). The resistivity of the .alpha.-structure tantalum is from about 20 .mu..OMEGA. centimeters to about 60 .mu..OMEGA. centimeters. When hydrogen is included within this .alpha.-structure tantalum film, small amounts of nitrogen may be contained along with the hydrogen in the film. When a semiconductor layer is directly formed on the lower conductive layer, the upper conductive layer contains, as a primary component, the hydrogen contained .alpha.-structure tantalum.

Thin film semiconductor device, fabrication method thereof, electronic

Growing community of inventors

Suwa, Japan

Seiichiro Higashi