Kabushiki Kaisha Toshiba

Seiichi Yoshida

Osamu Furukawa

Motomasa Imai

Mitsuo Harata

To obtain a ceramic material having a high dielectric constant (K=2300 to 7000), a high insulation resistance (CR=4000 to 18000 ohmF), a low temperature dependence (.+-.10%) to (.+-.22, -33%) upon dielectric constant over a wide temperature range (-55 and +125.degree. C.) and a relatively low sintering temperature (1000.degree. C. to 1250.degree. C.), BaTiO.sub.3 powder at least 50 wt % of which is 0.7 to 3 .mu.m in particle size) is mixed with another compound with perovskite structure mainly composed of oxides of Pb, Ba, Sr, Zn, Nb, Mg and Ti before sintering. Further, part of Ti of BaTiO.sub.3 is substitutable with Zr or Sn, and part of Ba of BaTiO.sub.3 is substitutable with Sr, Ca or Ce.

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Katsushika, Japan

Seiichi Yoshida