Sharp Kabushiki Kaisha Corporation

Asahi Kasei Kogyo Kabushiki Kaisha

Osaka Seihan Center Kyogyo Kumiai

Seiichi Uchida

Yasuyuki Ogawa

Shigeyasu Mori

Yutaka Takamaru

Kohhei Tanaka

Seiji Kaneko

Tadayoshi Miyamoto

Kuniaki Okada

Kazuatsu Ito

Kaoru Yamamoto

Makoto Nakazawa

Mitsunobu Miyamoto

Takuya Matsuo

Naoki Ueda

Tomohiro Kimura

Hiroyuki Ogawa

Takahiro Sasaki

Hisashi Watanabe

Toshihiro Yanagi

Mitsuhiro Murata

Yasuhiro Sugita

Youhei Nakanishi

Kazutoshi Kida

Shinji Yamagishi

Ryuzo Yuki

Masayuki Kanehiro

Takayuki Nishiyama

Yuhji Yashiro

Masahiro Mitani

Sumio Katoh

Ken Kuboki

Akira Shibazaki

Noriaki Yamaguchi

In a display device including scanning lines, light emission control lines, data lines, pixel circuits, and a drive circuit that drives the scanning lines, the light emission control lines, and the data lines, the pixel circuit includes a light-emitting element and a drive transistor that controls the amount of current flowing through the light-emitting element. The drive circuit has a monitoring mode, and during a frame period in the monitoring mode, the drive circuit sets non-light-emission periods, which are sequentially delayed and have the same length, for rows of the pixel circuits, selects a row to be measured from among the rows of the pixel circuits as a monitoring row, sets a monitoring period that partially overlaps a non-light-emission period of the monitoring row, and measures characteristics of light-emitting elements or drive transistors in pixel circuits in the monitoring row during the monitoring period.

Display device and method for driving same

A display device includes a pixel, wherein the pixel has a driving transistor, a monitoring transistor connected to the driving transistor, and a resistor provided in the pixel, and having one end connected between the driving transistor and the monitoring transistor, and the display device is capable of detecting a temperature of the pixel in accordance with a value of current that flows through the resistor and the monitoring transistor.

Display device

A display device includes: a plurality of scanning lines; a plurality of data lines; a plurality of light-emission control lines; a plurality of pixel circuits each including a light-emitting element; a scanning line drive circuit that drives the scanning lines based on a first clock signal; a data line drive circuit that drives the data lines; a light-emission control line drive circuit that drives the light-emission control lines based on a second clock signal; and a display control circuit that outputs at least the first and second clock signals. The display control circuit classifies a frame period into a scanning period and a pause period, and during the pause period, the display control circuit stops the first clock signal and makes a frequency of the second clock signal lower than that during the scanning period. This further reduces the power consumption of the display device that performs low-frequency driving.

Further reduction of power consumption in display device with low-frequency driving

An array boardincludes a gate line, a TFT, a pixel electrode, a display pixel PX, and a second interlayer insulation film. The TFTincludes a gate electrodeformed from a part of the gate line, a channel sectionformed from an oxide semiconductor film, a source sectionconnected to one end of the channel section, and a drain sectionconnected to another end of the channel sectionand formed from the oxide semiconductor filmhaving resistance lower than the channel section. The pixel electrodeis connected to the drain section. The display pixel PX includes the TFTand the pixel electrode. The second interlayer insulation filmhas a second hole in a position overlapping the pixel electrode and the drain sectionand not overlapping the gate electrode

Thin film transistor substrate and display panel

A liquid crystal display device includes a first substrate, a second substrate, a liquid crystal layer, and a plurality of columnar spacers. The pixel arrangement is a stripe arrangement including red, green and blue pixel columns. The first substrate includes TFTs, one for each pixel, wherein each TFT includes an oxide semiconductor layer. The second substrate includes a color filter layer and a light-blocking layer. The light-blocking layer includes a plurality of first shading portions extending along the column direction, and a plurality of second shading portions extending along the row direction. Each of the columnar spacers is aligned with one of the second shading portions. At least one of the red, green and blue pixel columns has first pixel boundaries, where one of the second shading portions is present, and second pixel boundaries, where none of the second shading portions present, alternating with each other in the column direction, and the second shading portions are arranged in a staggered arrangement.

Liquid crystal display device

A first substrate of a display device includes a TFT provided for each pixel and including an oxide semiconductor layer. A second substrate includes a color filter layer and a light blocking layer. At least one of a first, second and third color filter included in the color filter layer has an average transmittance of 0.2% or less for visible light having a wavelength of 450 nm or less. In pixels provided with color filters having an average transmittance of 0.2% or less for visible light having a wavelength of 450 nm or less, the light blocking layer (a) includes a TFT shading portion extending along a channel length direction and having a width that is less than or equal to a length of the oxide semiconductor layer along a channel width direction; (b) includes a TFT shading portion extending along the channel width direction and having a width that is less than or equal to the length of the oxide semiconductor layer along the channel length direction; or (c) includes no TFT shading portion.

A semiconductor device (A) includes a thin film transistor (), an inter-layer insulation layer () covering the thin film transistor, and a transparent conductive layer () formed on the inter-layer insulation layer. The metal oxide layer () of the thin film transistor includes a first portion () overlapping the gate electrode () via a gate insulation layer () and a second portion () not overlapping the gate electrode (). The second portion () crosses a different edge (e) different from an edge (e) of the drain electrode () on a side of the first portion when viewed in the normal direction of the substrate (). The inter-layer insulation layer has a contact hole () disposed to overlap a part of the drain electrode () and at least a part of the second portion () of the metal oxide layer when viewed in the normal direction of the substrate. The transparent conductive layer () comes into contact with the drain electrode (), the second portion (), and the gate insulation layer () in the contact hole ().

Semiconductor device, display apparatus, and method of manufacturing semiconductor device

A semiconductor device () includes: a thin film transistor () including an oxide semiconductor layer () including a channel region, and a source contact region and a drain contact region arranged on opposite sides of the channel region; an insulating layer arranged so as to cover the oxide semiconductor layer (), the insulating layer having a contact hole (CH) through which the drain contact region is exposed; and a transparent electrode () to be in contact with the drain contact region in the contact hole (CH), wherein: as seen from a direction normal to the substrate, at least a part R of the drain contact region overlaps a gate electrode (); and on an arbitrary cross section that extends in a channel width direction across the at least part (R) of the drain contact region, a width of the oxide semiconductor layer () is greater than a width of the gate electrode (), and the gate electrode () is covered by the oxide semiconductor layer () with the gate insulating layer therebetween.

Semiconductor device and method for manufacturing semiconductor device

A first substrate () of a liquid crystal display device () includes a TFT () that includes an oxide semiconductor layer (a). A second substrate () includes a color filter layer () and a light-shielding layer (). The light-shielding layer has a first TFT light-shielding portion () for each row in at least a blue pixel column, and a second TFT light-shielding portion () every n rows (n represents an integer of 2 or more) in a pixel column in which at least one type of color filter other than blue color filters is provided, the second TFT light-shielding portion having a larger area than the first TFT light-shielding portion. A columnar spacer () is arranged so as not to overlap the first TFT light-shielding portion but to overlap the second TFT light-shielding portion.

A conductive element includes: a first conductive film; a second conductive film connected to the first conductive film; a first insulating film covering the first conductive film and disposed in a layer below the second conductive film, the first insulating film having a contact hole exposing at least an edge face of the first conductive film and thereby connecting the second conductive film to the first conductive film; a second insulating film disposed in a layer above the second insulating film so as to straddle the contact hole; and a third conductive film disposed in a layer above the second conductive film with the second insulating film between the second and third conductive films, the third conductive film having a conductive film opening that contains a location overlapping the edge face of the first conductive film in a plan view.

Conductive element and liquid crystal display element

A liquid crystal display device (a display device) includes a liquid crystal panel (a display panel) having an outer peripheral edge portion having a substantially circular shape and including linear edge portions that are linear at a part of the outer peripheral edge portion, and flexible printed circuit boards (mounting components) mounted in an outer portion of the liquid crystal display panel to match arrangement of the linear edge portions in a circumferential direction.

A liquid crystal panel () includes a pair of substrates (); a liquid crystal layer () provided between the pair of substrates; and a sealing member () provided so as to surround the liquid crystal layer. A plurality of pixels (P, P) are provided in a matrix in a region surrounded by the sealing member. Each of the plurality of pixels includes an oxide semiconductor TFT () provided in one substrate () of the pair of substrates; and a pixel electrode () provided in the one substrate and connected with the oxide semiconductor TFT. Each of the plurality of pixels is configured such that when the oxide semiconductor TFT is switched from an on-state to an off-state, a level of a voltage to be applied to the liquid crystal layer by use of the pixel electrode is shifted in a negative direction by a pull-in voltage &#x394;Vd. A pull-in voltage &#x394;Vdin a first pixel (P) among the plurality of pixels is lower than a pull-in voltage &#x394;Vdin a second pixel (P) located farther from the sealing member than the first pixel.

Liquid crystal panel and active matrix substrate used therefor

A semiconductor device () includes a plurality of pixel regions Pix arranged in a matrix having a row direction and a column direction, wherein each of the plurality of pixel regions Pix includes a thin film transistor () which includes a gate electrode (), a gate insulating layer () covering the gate electrode, an oxide semiconductor layer (A) provided on the gate insulating layer, and a source electrode () and a drain electrode () which are electrically connected to the oxide semiconductor layer, a metal oxide layer (B) formed out of a same oxide film as the oxide semiconductor layer, an interlayer insulating layer () covering the thin film transistor and the metal oxide layer, and a pixel electrode () provided on the interlayer insulating layer and electrically connected to the drain electrode, the metal oxide layer (B) includes a conductor region (), and the pixel electrode () overlaps with at least a part of the conductor region () with the interlayer insulating layer () interposed therebetween.

Semiconductor device and method for manufacturing same

Each pixel region of an active matrix substrate includes a thin-film transistor, an interlayer insulating layer that includes an organic insulating layer, a transparent connection layer formed on the interlayer insulating layer, an inorganic insulating layer formed on the transparent connection layer, and a pixel electrode formed on the inorganic insulating layer. The transparent connection layer contacts a drain electrode inside of a first contact hole formed in the interlayer insulating layer. The pixel electrode contacts the transparent connection layer inside of a second contact hole formed in the inorganic insulating layer. The first contact hole and the second contact hole do not overlap with one another when a substrate is viewed from a normal direction. Inside the first contact hole, a bottom surface and sidewalls of the first contact hole are covered by the transparent connection layer, the inorganic insulating layer, and the pixel electrode.

Active matrix substrate and method for producing same

At the time of partial drive, the levels of voltages applied to data lines SL1 to SLn are switched according to a rewrite frequency set for each region of a display screen. For example, in a still-image display region with a relatively low rewrite frequency, the levels of the voltages applied to the data lines SL1 to SLn are set to be higher than those for a moving-image display region with a relatively high rewrite frequency. By this, the same effect as that obtained when a counter voltage is switched according to the rewrite frequency can be obtained. Thus, flicker occurring in each region of the display screen can be suppressed.

Growing community of inventors

Osaka, Japan

Seiichi Uchida