Sanyo Electric Co., Ltd.

Seiichi Tokunaga

Masayuki Hata

Kunio Takeuchi

Yasuyuki Bessho

Takenori Goto

Tatsuya Kunisato

Hiroki Ohbo

Shuji Fujiwara

Masao Nakao

Yasumitsu Kunoh

Hiroaki Furukawa

Ryokan Yuasa

Such a semiconductor light-emitting device () that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element () and a thin-film light diffusion portion () arranged on a light-emitting direction side of the semiconductor light-emitting element.

Semiconductor light-emitting device

A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus

A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.

Semiconductor laser device and method of manufacturing the same

Illumination device has a plurality of light emitting units, each with light emitting element and first fluorescent material region provided at a light emitting side of the light emitting element. A plurality of second fluorescent material regions are provided at the light emitting sides of respective light emitting units. Second fluorescent material regions having the same emission conversion property are respectively provided at the light emitting side of at least one light emitting unit having the same emission property among the plurality of light emitting units.

Illumination device and manufacturing method thereof

A light emitting device includes a light emitting element which emits light with a first wavelength; and a light emitting conversion unit for converting the light with the first wavelength by using wavelength conversion materials including a short wavelength conversion material and a long wavelength conversion material, the short wavelength conversion material being that which emits light with a second wavelength longer in wavelength than the light with the first wavelength, by absorbing the light with the first wavelength, and the long wavelength conversion material being that which emits light with a wavelength longer than the second wavelength by absorbing the light with the first wavelength. A proportion of the short wavelength conversion material of the wavelength conversion materials included in a first region is smaller than that of the short wavelength conversion material of the wavelength conversion materials included in the entire light emitting conversion unit, and a proportion of the short wavelength conversion material of the wavelength conversion materials included in a second region is larger than that of the short wavelength conversion material of the wavelength conversion materials included in the entire light emitting conversion unit.

Light emitting device

An oxide film having a desired pattern is first formed on a magnesia substrate. A superconducting oxide film is then formed on the exposed portion of the magnesia substrate and also on the oxide film. Thus, a tilt-boundary junction is formed in the boundary between the superconducting oxide film portion on the magnesia substrate and the superconducting oxide film portion on the oxide film. The tilt-boundary junction functions as a Josephson junction. By utilizing the Josephson junction in the tilt-boundary junction, a SQUID pattern can be formed on the magnesia substrate to provide a SQUID device.

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Suita, Japan

Seiichi Tokunaga